Part  UNR911BJ 
Category  Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors) 
Title  RETs (Resistor Equipped transistors) 
Description  Marking = 6L ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) =  ;; Package = SSMini3F1 
Company  Panasonic Industrial Company/Electronic Components 
Datasheet  Download UNR911BJ datasheet

Cross ref.  Similar parts: DDTA115TE 
Quote 
Features, Applications 
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SSmini type package, allowing automatic insertion through tape packing. Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW °C Note) The part number in the parenthesis shows conventional part number.Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9119J UNR9118J/911LJ/911CJ/911VJ Collector to base voltage Collector to emitter voltage Forward UNR9111J current UNR9112J/911EJ transfer UNR9113J/9114J/911AJ/ ratio UNR911NJ/911TJ UNR911VJ Collector to emitter saturation voltage Highlevel output voltage Lowlevel output voltage UNR911EJ UNR911AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = 10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = 1 mA, = 200 MHz  0.2 VCBO VCEO hFE = 10 µA, = 2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit µA Parameter Resistance ratio UNR911TJ UNR911AJ/911VJ Resistance between emitter to base R2 30% Symbol R1/R2 Conditions Min Typ k Max Unit 
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UN911DJ 
UN911EJ 
UN911FJ 
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components 
UNR911CJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911D Silicon PNP Epitaxial Planer Transistor With Biultin Resistor 
UNR911DJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911DJUN911DJ 
UNR911E Silicon PNP Epitaxial Planer Transistor With Biultin Resistor 
UNR911EJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911EJUN911EJ 
UNR911F Silicon PNP Epitaxial Planer Transistor With Biultin Resistor 
UNR911FJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911FJUN911FJ 
UNR911H Silicon PNP Epitaxial Planer Transistor With Biultin Resistor 
UNR911HJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911HJUN911HJ 
UNR911L Silicon PNP Epitaxial Planer Transistor With Biultin Resistor 
UNR911LJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911LJUN911LJ 
UNR911MJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911MJUN911MJ 
UNR911NJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 
UNR911TJUN911TJ 
UNR911VJ Marking = 6L ;; V_{CEO}(V) = 50 ;; I_{C}(A) = 0.1 ;; P_{T}(W) = 0.125 ;; R_{1}(kW ) = 47 ;; R_{2}(kW ) =  ;; Package = SSMini3F1 