Details, datasheet, quote on part number: UNR911FJ
PartUNR911FJ
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 6L ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = - ;; Package = SSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR911FJ datasheet
Cross ref.Similar parts: PDTA143XM, DTA143XEBTL, UN911FJ
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9119J UNR9118J/911LJ/911CJ/911VJ Collector to base voltage Collector to emitter voltage Forward UNR9111J current UNR9112J/911EJ transfer UNR9113J/9114J/911AJ/ ratio UNR911NJ/911TJ UNR911VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR911EJ UNR911AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = -10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = 1 mA, = 200 MHz - 0.2 VCBO VCEO hFE = -10 A, = -2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR911TJ UNR911AJ/911VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

Related products with the same datasheet
UN9111J
UN9112J
UN9113J
UN9114J
UN9115J
UN9116J
UN9117J
UN9118J
UN9119J
UN911DJ
UN911EJ
UN911FJ
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR911FJUN911FJ
UNR911H Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR911HJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911HJUN911HJ
UNR911L Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR911LJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911LJUN911LJ
UNR911MJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911MJUN911MJ
UNR911NJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911TJUN911TJ
UNR911VJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911VJUN911VJ
UNR9210 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9210J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9210JUN9210J
UNR9211 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9211J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9211JUN9211J
UNR9212 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9212J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1

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