Details, datasheet, quote on part number: UNR9210J
PartUNR9210J
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 8L ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR9210J datasheet
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9219J UNR9218J/921LJ/921CJ/921VJ Collector to base voltage Collector to emitter voltage Forward UNR9211J current UNR9212J/921EJ transfer UNR9213J/9214J/921AJ/ ratio UNR921NJ/921TJ UNR921VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR921EJ UNR921AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = 10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = -2 mA, = 200 MHz 4.9 0.2 VCBO VCEO hFE = 10 A, = 2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR921TJ UNR921AJ/921VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

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Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR9210JUN9210J
UNR9211 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9211J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9211JUN9211J
UNR9212 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9212J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9212JUN9212J
UNR9213 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9213J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9213JUN9213J
UNR9214 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9214J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9214JUN9214J
UNR9215 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9215J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9215JUN9215J
UNR9216 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9216J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9216JUN9216J
UNR9217 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9217J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
 
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