Details, datasheet, quote on part number: UNR9215JUN9215J
PartUNR9215JUN9215J
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
Description
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR9215JUN9215J datasheet
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9219J UNR9218J/921LJ/921CJ/921VJ Collector to base voltage Collector to emitter voltage Forward UNR9211J current UNR9212J/921EJ transfer UNR9213J/9214J/921AJ/ ratio UNR921NJ/921TJ UNR921VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR921EJ UNR921AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = 10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = -2 mA, = 200 MHz 4.9 0.2 VCBO VCEO hFE = 10 A, = 2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR921TJ UNR921AJ/921VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

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UNR9216JUN9216J
UNR9217JUN9217J
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UNR9219JUN9219J
UNR921DJUN921DJ
UNR921EJUN921EJ
UNR921KJUN921KJ
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR9216 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9216J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9216JUN9216J
UNR9217 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9217J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9217JUN9217J
UNR9218 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9218J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9218JUN9218J
UNR9219 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR9219J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR9219JUN9219J
UNR921AJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR921D Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR921DJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR921DJUN921DJ
UNR921E Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR921EJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNR921EJUN921EJ
UNR921F Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR921FJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
 
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