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Part: UNR921M
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: Silicon NPN Epitaxial Planer Transistor
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download UNR921M datasheet File size : 82 kB
Request For quote: Find where to buy UNR921M
Datasheet text preview:
Transistors with built-in Resistor
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
1.6±0.15 0.4 0.8±0.1 0.4 0.2 -0.05 0.15 -0.05
+0.1
Unit: mm
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing automatic insertion through tape packing and magazine packing.
1.6±0.1 1.0±0.1 0.5 1 0.5 3
2
0.45±0.1 0.3
0.75±0.15
s Resistance by Part Number
q q q q q q q q q q q q q q q q q q q q
Marking Symbol (R1) UN9211 8A 10k UN9212 8B 22k UN9213 8C 47k UN9214 8D 10k UN9215 8E 10k UN9216 8F 4.7k UN9217 8H 22k UN9218 8I 0.51k UN9219 8K 1k UN9210 8L 47k UN921D 8M 47k UN921E 8N 47k UN921F 8O 4.7k UN921K 8P 10k UN921L 8Q 4.7k UNR921M EL 2.2k UNR921N EX 4.7k UNR921AJ 8X 100k UNR921BJ 8Y 100k UNR921CJ 8Z --
(R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 4.7k 4.7k 47k 47k 100k -- 47k
0 to 0.1
0.2±0.1
1 : Base 2 : Emitter 3 : Collector SSMini Type Pakage Unit: mm
1.60± 0.05 0.80 0.80± 0.05 0.425 0.425
0.80
1.00± 0.05
1.600.03
+0.05
0.50
0.50
+0.1
0.850.03
+0.05
0.120.01
+0.03
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 125 125 55 to +125 Unit V V mA mW °C °C
1 : Base 2 : Emitter 3 : Collector SSMini Flat Type Pakage (J type)
Internal Connection
R1
0 to 0.1
C
B
R2
E
0.700.03
+0.05
0.27± 0.02
0.80
1
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
s Electrical Characteristics
Parameter Collector cutoff current UN9211 UN9212/9214/921E/921D Emitter cutoff current UN9213/UNR921M/921N/UNR921AJ UN9215/9216/9217/9210/UNR921BJ UN921F/921K UN9219 UN9218/921L/UNR921CJ Collector to base voltage Collector to emitter voltage UN9211 UN9212/921E Forward current transfer ratio UN9213/9214/921M/UNR921AJ/921CJ
(Ta=25°C)
Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 VCE = 10V, IC = 5mA 160 30 20 80 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VOC = 5V, VB = 3.5V, R1 = 1k VOL VCC = 5V, VB = 10V, R1 = 1k VCC = 5V, VB = 6V, RL = 1k VCC = 5V, VB = 5V, RL = 1k fT VCB = 10V, IE = 2mA, f = 200MHz 150 10 22 47 R1 (30%) 4.7 0.51 1 100 (+30%) k 4.9 0.2 0.2 0.2 0.2 0.2 MHz V 400 0.25 V V 460 V V mA Unit µA µA
UN9215*/9216*/9217*/9210*/UNR921BJ hFE UN921F/921D/9219 UN9218/921K/921L UN921N
Collector to emitter saturation voltage Output voltage high level Output voltage low level UN9213/921K/UNR921BJ UN921D UN921E UNR921AJ Transition frequency UN9211/9214/9215/921K UN9212/9217 Input resistance UN9213/921D/921E/9210 UN9216/921F/921L/UNR921N UN9218 UN9219/UNR921M UNR921AJ/921BJ
* hFE rank classification (UN9215/9216/9217/9210)
Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
2
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/ Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
s Electrical Characteristics (continued)
Parameter UN9211/9212/9213/921L UN9214 UN9218/9219 UN921D Resistance ratio UN921E UN921F UN921K UN921M UN921N UNR921AJ Resistance between Emitter to Base UNR921CJ R2 R1/R2 Symbol
(Ta=25°C)
Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0. 47 2.13 0.047 0.1 1.0 30% 47 30% k max 1.2 0.25 0.12 Unit
3
Others parts begin by un
UN-1 UN-2 UN-3 UN-4 UN-5 UN-6
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