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Part: UNRF1A0
Category:
Discrete
-> Transistors
-> Bipolar
-> RETs (Resistor Equipped transistors)
Description: Marking = 1R ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = ML3-N2
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download UNRF1A0 datasheet File size : 82 kB
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Datasheet text preview:
Transistors with built-in Resistor
UNRF1A0
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
0.60±0.05
Features
· Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
3
2
1 1.00±0.05
0 01 0.39+0..03 -
0.25±0.05
0.50±0.05
0.25±0.05 1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating -5 0 -5 0 -8 0 100 125 -55 to +125 Unit V V mA mW °C °C
3
0.65±0.01
2 0.05±0.03
1: Base 2: Emitter 3: Collector ML3-N2 Package
Marking Symbol: 1R Internal Connection
R1 (47 k) B
C E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k - 30% 47 80 -4.9 - 0.2 + 30% 160 Min -5 0 -5 0 - 0.1 - 0.5 - 0.1 460 - 0.25 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15±0.05 0.05±0.03 0.35±0.01
Publication date: December 2002
SJH00067AED
1
UNRF1A0
PT Ta
120
IC VCE
-80 - 0.7 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10
-90
- 0.9 mA IB = -1.0 mA Ta = 25°C - 0.8 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA
Total power dissipation PT (mW)
100
Collector current IC (mA)
-70 -60 -50 -40 -30 -20 -10
80
-1
60
Ta = 85°C - 0.1 -25°C 25°C IC / IB = 10 -1 -10 -100
40
- 0.1 mA
20
0
0
20
40
60
80
100 120 140
0
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
400 350 Ta = 85°C VCE = -10 V
Cob VCB
10 f = 1 MHz Ta = 25°C
-10
I O VI N
VO = -5 V Ta = 25°C
Forward current transfer ratio hFE
25°C
250 -25°C 200 150 100 50 0 -1
Output current IO (mA)
1 -8 -16 -24 -32 -40
300
-1
-10
-100
0
- 0.1
0
- 0.4
- 0.8
-1.2
-1.6
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
-10 VO = - 0.2 V Ta = 25°C
Input voltage VIN (V)
-1
- 0.1 - 0.1
-1
-10
-100
Output current IO (mA)
2
SJH00067AED
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UN-1 UN-2 UN-3 UN-4 UN-5 UN-6
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