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Part: UNRF1A3
Category:
Discrete
-> Transistors
-> Bipolar
-> RETs (Resistor Equipped transistors)
Description: Marking = 1B ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = 47 ;; Package = ML3-N2
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download UNRF1A3 datasheet File size : 82 kB
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Datasheet text preview:
Transistors with built-in Resistor
UNRF1A3
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits Features
· Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
3 2
1 1.00±0.05
0.60±0.05
0 01 0.39+0..03 -
0.25±0.05
0.25±0.05 1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating -5 0 -5 0 -8 0 100 125 -55 to +125 Unit V V mA mW °C °C
0.50±0.05
3
0.65±0.01
2 0.05±0.03
1: Base 2: Emitter 3: Collector ML3-N2 Package
Marking Symbol: 1B Internal Connection
R1 (47 k) B R2 (47 k)
C
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R1 / R 2 fT VCB = -10 V, IE = 2 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k - 30% 0.8 47 1.0 150 -4.9 - 0.2 + 30% 1.2 80 - 0.25 Min -5 0 -5 0 - 0.1 - 0.5 - 0.1 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15±0.05 0.05±0.03 0.35±0.01
Publication date: June 2003
SJH00058BED
1
UNRF1A3
PT Ta
120
IC VCE
-80 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA IB = -1.0 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-1
Total power dissipation PT (mW)
100
Collector current IC (mA)
80
-60
- 0.5 mA - 0.4 mA - 0.3 mA
Ta = 85°C - 0.1 -25°C 25°C
60
-40 - 0.2 mA -20
40
20
- 0.1 mA Ta = 25°C
IC / IB = 10 -1 -10 -100
0
0
40
80
120
0
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
10
VCE = -10 V 160 Ta = 85°C
Cob VCB
f = 1 MHz Ta = 25°C
-10
I O VI N
VO = -5 V Ta = 25°C
Forward current transfer ratio hFE
120
25°C
Output current IO (mA)
1
-1
-25°C 80
- 0.1
40
0 - 0.1
-1
-10
-100
0
-10
-20
-30
-40
- 0.01
0
-1
-2
-3
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
-10 VO = - 0.2 V Ta = 25°C
Input voltage VIN (V)
-1
- 0.1 - 0.1
-1
-10
Output current IO (mA)
2
SJH00058BED
Others parts begin by un
UN-1 UN-2 UN-3 UN-4 UN-5 UN-6
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