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Part: UNRF1AN
Category:
Discrete
-> Transistors
-> Bipolar
-> RETs (Resistor Equipped transistors)
Description: Marking = 3K ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -80 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(kW ) = 47 ;; Package = ML3-N2
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download UNRF1AN datasheet File size : 82 kB
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Datasheet text preview:
Transistors with built-in Resistor
UNRF1AN
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
0.60±0.05
Features
· Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
3
2
1 1.00±0.05
0 01 0.39+0..03 -
0.25±0.05
0.25±0.05 1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating -5 0 -5 0 -8 0 100 125 -55 to +125 Unit V V mA mW °C °C
0.50±0.05
3
0.65±0.01
2 0.05±0.03
1: Base 2: Emitter 3: Collector ML3-N2 Package
Marking Symbol: 3K Internal Connection
R1 (4.7 k) B R2 (47 k)
C
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R1 / R 2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k - 30% 4.7 0.1 80 -4.9 - 0.2 + 30% 80 Min -5 0 -5 0 - 0.1 - 0.5 - 0.2 400 - 0.25 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15±0.05 0.05±0.03 0.35±0.01
Publication date: March 2003
SJH00081AED
1
UNRF1AN
PT Ta
120
-80
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
- 0.9 mA Ta = 25°C - 0.8 mA IB = -1.0 mA - 0.7 mA - 0.6 mA - 0.5 mA -60 - 0.4 mA - 0.3 mA -40 - 0.2 mA
-100
VCE(sat) IC
Total power dissipation PT (mW)
100
Collector current IC (mA)
-10
25°C
80
60
-1
Ta = 85°C
40
-20
- 0.1 mA
- 0.1
-25°C
20
0
0
0
40
80
120
0
-2
-4
-6
-8
-10
-12
- 0.01 -1
IC / IB = 10 -10 -100 -1 000
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
250 Ta = 85°C VCE = -10 V
Cob VCB
10 f = 1 MHz Ta = 25°C
-100 VO = -5 V Ta = 25°C
I O VI N
Forward current transfer ratio hFE
200
25°C -25°C
150
Output current IO (mA)
1 -10 -20 -30 -40
-10
100
50
0 -1
-10
-100
-1 000
0
-1
0
- 0.5
-1.0
-1.5
-2.0
-2.5
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
-10 VO = - 0.2 V Ta = 25°C
Input voltage VIN (V)
-1
- 0.1 - 0.1
-1
-10
-100
Output current IO (mA)
2
SJH00080AED
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