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Details, datasheet, quote on part number:UP01212
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| Part: | UP01212 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 9K ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 22 ;; R<SUB>2</SUB>(Tr2)(kW ) = 22 ;; Package = |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP01212 datasheet File size : 82 kB |
| Request For quote: | Find where to buy UP01212
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Datasheet text preview:
Composite Transistors
UP01212
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
5
(0.30) 4
0.20 0.02
+0.05
0.10±0.02
1.20±0.05
1.60±0.05
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
1
1.00±0.05 1.60±0.05
· UNR2212 × 2
5°
0.55±0.05
Basic Part Number
Display at No.1 lead
(0.20)
2 3 (0.50) (0.50)
5°
(0.20)
Features
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating 50 50 100 125 125 -55 to +125 Unit V V mA mW °C °C
1: Base (Tr1) 2: Emitter 3: Base (Tr2)
0 to 0.02
4: Collector (Tr2) 5: Collector (Tr1) SSMini5-F2 Package
Marking Symbol: 9K Internal Connection
5 Tr1 4 Tr2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE h FE(Small/
Large)
1
2
3
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
Min 50 50
Typ
Max
Unit V V µA µA mA
0.1 0.5 0.2 60 0.50 0.99 0.25 4.9 0.2 - 30% 0.8 22 1.0 150 + 30% 1.2
V CE(sat) VO H VOL R1 R1 / R 2 fT
V V V k MHz
VCB = 10 V, IE = -2 mA, f = 200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between one and another device
0.10 max
Publication date: June 2003
SJJ00267BED
1
UP01212
PT Ta
150
160 140 Ta = 25°C 0.9 mA 0.8 mA
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
IB = 1.0 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 80 60 40 0.1 mA 20 0 0.2 mA 1
VCE(sat) IC
IC / IB = 10
Total power dissipation PT (mW)
125
Collector current IC (mA)
120
100
Ta = 75°C
75
0.1
25°C
-25°C
50
25
0 0 40 80 120 160
0
2
4
6
8
10
12
0.01
1
10
100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
400 VCE = 10 V Ta = 75°C
Cob VCB
10
100
I O VI N
f = 1 MHz Ta = 25°C
VO = 5 V Ta = 25°C
Forward current transfer ratio hFE
-25°C
Output current IO (mA)
1
300
25°C
10
200
1
100
0
0.1
1
10
100
1 000
0
5
10
15
20
25
30
35
0
0.5
1.0
1.5
2.0
2.5
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
10 VO = 0.2 V Ta = 25°C
Input voltage VIN (V)
1 1
10
100
Output current IO (mA)
2
SJJ00267BED
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