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Details, datasheet, quote on part number:UP01878
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| Part: | UP01878 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = al ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP01878 datasheet File size : 82 kB |
| Request For quote: | Find where to buy UP01878
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Datasheet text preview:
Composite Transistors
UP01878
Silicon N-channel MOSFET
Unit: mm
(0.30) 0.20 0.02 4
1.20±0.05 1.60±0.05
+0.05
0.10±0.02
For switching Features
· Two elements incorporated into one package · Reduction of the mounting area and assembly cost by one half
5
1
1.00±0.05 1.60±0.05
Basic Part Number of Element
· 2SK3539 × 2 elements
Display at No.1 lead
0.55±0.05
5°
(0.20)
2 3 (0.50) (0.50)
5°
(0.20)
Parameter Rating of element Drain to source voltage Gate to source voltage Drain current Max drain current Overall Allowable power dissipation * Channel temperature Storage temperature Note) *: Total power dissipation
Symbol VDSS V GSO ID IDP PD T ch Tstg
Rating 50 ±7 100 200 125 125 -55 to +125
Unit V V mA mA mW °C °C
FET1
1: Gate (FET1) 2: Source 3: Gate (FET2)
0 to 0.02
Absolute Maximum Ratings Ta = 25°C
4: Drain (FET2) 5: Drain (FET1) SMini5-G1 Package
Marking Symbol: AL Internal Connection
5 4
FET2
1
2
3
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Drain to source voltage Drain cut-off current Gate cut-off current Gate threshold voltage Drain on-state resistance Symbol VDSS IDSS IGSS V th RDS(on) Yfs Ci s s C oss Cr s s to n toff VDD = 3 V, VGS = 0 V to 3 V, RL = 470 VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Conditions ID = 10 µA, VGS = 0 VDS = 50 V, VGS = 0 VGS = ±7 V, VDS = 0 ID = 1 µA, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time * Turn-off time
*
Min 50
Typ
Max
Unit V µA µA V mS pF pF pF ns ns
1.0 ±5 0.9 1.2 8 6 20 60 12 7 3 200 200 1.5 15 12
ID = 10 mA, VDS = 4.0 V VDS = 3 V, VGS = 0 V, f = 1 MHz
Note) *: Refer to ton , toff test circuit (next page)
0.10 max
Publication date: July 2002
SJJ00265AED
1
UP01878
ton , toff Test circuit Vout 470 Vin VDD = 3 V Vout 10% 10% 90% ton toff
90%
50
PD Ta
140
70 60
100 µF
VGS = 3.0 V
ID VDS
Ta = 25°C VGS = 2.0 V 1.9 V
ID VGS
250 VD S = 3 V Ta = -25°C 25°C 75°C 150
Allowable power dissipation PD (mW)
120 100 80 60 40 20 0 0 20 40 60 80 100 120 140
200
Drain current ID (mA)
50 40 30 20 10 0
1.8 V
Drain current ID (mA)
1.7 V 1.6 V 1.5 V
100
50
0
2
4
6
8
10
12
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Ambient temperature Ta (°C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Yfs VGS
0.18
60
RDS(on) VGS
ID = 10 mA
10
V IN I O
VO = 5 V Ta = 25°C
Forward transfer admittance |Yfs | (mS)
Drain on-state resistance RDS(on) ()
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0
VDS = 3 V f = 1 MHz Ta = 25°C
50
40
Input voltage VIN (V)
Ta = 75°C 25°C -25°C 0 1 2 3 4 5 6 7
30
1
20
10
0.5
1.0
1.5
2.0
2.5
3.0
0
0.1
1
10
100
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
Output current IO (mA)
2
SJJ00265AED
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