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Details, datasheet, quote on part number:UP04113
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| Part: | UP04113 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 6S ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(Tr2)(kW ) = 47 ;; Package = SSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP04113 datasheet File size : 101 kB |
| Request For quote: | Find where to buy UP04113
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Datasheet text preview:
Composite Transistors
UP04111/4113/4116
Silicon PNP epitaxial planar transistor
Unit: mm
For switching/digital circuits
6
(0.30) 5 4
0 05 0.20+0..02
0.10±0.02
1.20±0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 - 100 125 125 -55 to +125 Unit V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
· UP04111 · UP04113 · UP04116
Marking Symbol (R1) 9U 10 k 6S 47 k 6U 4.7 k
(R2) 10 k 47 k
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Internal Connection
6 R1 Tr1 R2 1 2 R1 3 5 R2 Tr2 4
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter UP04111 IEBO cutoff current UP04113 UP04116 Collector to base voltage Collector to emitter voltage Forward current UP04111 transfer ratio UP04113 UP04116 Collector to emitter saturation voltage VCE(sat) IC = -10 mA, IB = - 0.3 mA VCBO V CEO hFE IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCE = -10 V, IC = -5 mA -50 -50 35 80 160 460 - 0.25 V Conditions VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min Typ Max - 0.1 - 0.5 - 0.5 - 0.1 - 0.01 V V mA Unit µA
0.10 max.
5°
0.55±0.05
I Resistance by Part Number
No.1 Pin indication
(0.20)
· Two elements incorporated into one package (Transistor with built-in resistor) · Reduction of the mounting area and assembly cost by one half
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
(0.20)
I Features
1.60±0.05
Publication date: May 2002
SJJ00001AED
1
UP04111/4113/4116
I Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter High-level output voltage Low-level output voltage UP04113 Gain bandwidth product Input resistance UP04116 UP04111 UP04113 Resistance ratio UP04111/4113 R1/ R 2 0.8 fT R1 Symbol V OH VOL Conditions VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k VCB = -10 V, IE = 1 mA, f = 200 MHz -3 0 % 80 4.7 10 47 1.0 1.2 + 30% MHz k Min - 4.9 - 0.2 Typ Max Unit V V
Common characteristics chart PT T a
150
Total power dissipation PT (mW)
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
Characteristics chart of UP04111 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
-140 Ta = 25°C -120 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA -20 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -10 -3 -1 -0.3 -0.1 -25°C 25°C
VCE(sat) IC
IC / IB = 10
hFE IC
140 VCE = -10 V Ta = 75°C 120 100 80 -25°C 60 40 20 0 - 0.1
-100 -80 -60 -40
Forward current transfer ratio hFE
Collector current IC (mA)
25°C
Ta = 75°C
- 0.03
- 0.01
- 0.003 -3 -10 -30 -100 -300 -1 000
- 0.001 -1
-1
-10
-100
-1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
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UP04111/4113/4116
Cob VCB
1 000 f = 1 MHz Ta = 25°C
10 000 -3 000 VO = -5 V Ta = 25°C
IO V I N
-100 -30
VIN IO
VO = - 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
Output current IO (µA)
-300 -100 -30 -10 -3
Input voltage VIN (V)
- 1.2 - 1.4 -1.6 -1.8 -2
100
-1 000
-10 -3 -1 - 0.3 - 0.1
10
1
- 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100
0.1
0
-5
- 10 -15 -20 -25 -30 -35
-1 -1
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics chart of UP04113 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
-140 -120 Ta = 25°C
-10
VCE(sat) IC
IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA
VCE = -10 V
250
hFE IC
Ta = 75°C VCE = -10 V
Forward current transfer ratio hFE
200
25°C -25°C
Collector current IC (mA)
-100 -80 -60 -40 -20 0
-1
150
- 0.1
Ta = 75°C 25°C -25°C
100
50
0
-2
-4
-6
-8
-10
-12
- 0.01 -1
-10
-100
0 -1
-10
-100
-1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
IO V I N
f = 1 MHz Ta = 25°C
-10 000 VO = -5 V Ta = 25°C
VIN IO
-100 VO = - 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
Output current IO (µA)
Input voltage VIN (V)
-1 000
-10
1
-100
-1
0.1
0
-5
-10 -15 -20 -25 -30 -35
-10 -1
-1.2
-1.4
-1.6
-1.8
-2
- 0.1 - 0.1
-1
-10
-100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJJ00001AED
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