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Details, datasheet, quote on part number:UP0411M
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| Part: | UP0411M |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = ea ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 2.2 ;; R<SUB>2</SUB>(Tr2)(kW ) = 47 ;; Package = SSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP0411M datasheet File size : 84 kB |
| Request For quote: | Find where to buy UP0411M
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Datasheet text preview:
Composite Transistors
UP0411M
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
6
(0.30) 5 4
0 05 0.20+0..02
0.10±0.02
1.20±0.05
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
(0.20)
Parameter Rating of element Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Total Junction temperature Storage temperature
Symbol VCBO V CEO IC PT Tj Tstg
Rating -5 0 -5 0 -100 125 125 -55 to +125
Unit V V mA mW °C °C
1: Emitter (Tr1) 4: Emitter (Tr2) 2: Base (Tr1) 5: Base (Tr2) 3: Collector (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: EA Internal Connection
6 Tr1 Tr2 1 2 3 5 4
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol V CBO V CEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High level output voltage Low level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO h FE VCE(sat) VOH V OL R1 R1 / R2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k
Min -5 0 -5 0
0 to 0.02
Absolute Maximum Ratings Ta = 25°C
Typ
Max
Unit V V
- 0.1 - 0.5 - 0.2 80 - 0.25 -4.9 - 0.2 - 30% 2.2 0.047 80 + 30%
µA mA
V V V k MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2002 SJJ00242BED
0.10 max.
· UNR111M (UN111M) × 2 elements
5°
0.55±0.05
Basic Part Number of Element
Display at No.1 lead
(0.20)
Features
1.60±0.05
1
UP0411M
PT Ta
250
-140 IB = -1.0 mA - 0.9 mA -120 - 0.8 mA - 0.7 mA -100 -80 -60 -40 -20
IC VCE
Ta = 25°C
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 -1 Ta = 75°C 25°C -25°C IC / IB = 33.3
Total power dissipation PT (mW)
200
Collector current IC (mA)
- 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA
150
100
- 0.3 - 0.1
50
- 0.03 - 0.01 -1 -3 -10 -30 -100 -300 -1 000
0 0 20 40 60 80 100 120 140 160
0
0
-2
-4
-6
-8
-10
-12
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
200 Ta = 75°C
10
Cob VCB
VCE = -10 V
I O VI N
f = 1 MHz Ta = 25°C
-1 000 VO = -5 V Ta = 25°C
160
25°C -25°C
Collector output capacitance Cob (pF)
Forward current transfer ratio hFE
120
Output current IO (mA)
-5 -10 -15 -20 -25 -30 -35 -40
-100
3
-10
80
-1
40
0 -1
-3
-10
-30
-100 -300 -1 000
1 0
- 0.1
0
- 0.5
-1.0
-1.5
-2.0
-2.5
Collector current IC (mA)
Collector to base voltage VCB (V)
Input voltage VIN (V)
VIN IO
-100 -30 VO = - 0.2 V Ta = 25°C
Input voltage VIN (V)
-10 -3 -1
- 0.3 - 0.1
- 0.03 - 0.01 -1 -3 -10 -30 -100
Output current IO (mA)
2
SJJ00242BED
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