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Details, datasheet, quote on part number:UP04215
 
 
Part:UP04215
Category:Discrete => Transistors => Composite Transistors
Description:Marking = 8T ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSMini6-F1
Company:Panasonic Industrial Company/Electronic Components
Datasheet:Download UP04215 datasheet   File size : 181 kB
Request For quote:  Find where to buy UP04215
 



Datasheet text preview:
Composite Transistors
UP04210/4211/4213/4214/4215/4216
Silicon NPN epitaxial planar transistor
For switching/digital circuits Features
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 (0.30) 6 5 4
0 05 0.20+0..02 ­
Unit: mm
0.10±0.02
1.20±0.05
1.60±0.05

Display at No.1 lead
· UP04210 · UP04211 · UP04213 · UP04214 · UP04215 · UP04216
Marking symbol (R1) 8Z 47 k 9V 10 k 8S 47 k BR 10 k 8T 10 k 8U 4.7 k
(R2) 10 k 47 k 47 k
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Internal Connection
Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 -55 to +125 Unit V V mA mW °C °C
6 R1 Tr1 R2 1
5 R2
4
Tr2 R1 2 3
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol V CBO V CEO ICBO ICEO Emitter cutoff current UP04211 UP04214 UP04213 UP04210/4215/4216 Forward current UP04211 UP04213/4214 IC = 10 mA, IB = 0.3 mA h FE VCE = 10 V, IC = 5 mA 35 80 160 VCE(sat) 460 0.25 V IEBO Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.5 0.2 0.1 0.01 mA Typ Max Unit V V µA
transfer ratio UP04210/4215/4216 Collector to emitter saturation voltage
0.10 max.

0.55±0.05
Resistance by Part Number
(0.20)
(0.20)
Publication date: June 2002
SJJ00002AED
1
UP04210/4211/4213/4214/4215/4216
Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter High-level output voltage Low-level output voltage UP04213 Input resistance UP04216 UP04211/4214/4215 UP04210/4213 Resistance ratio UP04211/4213 UP04214 fT VCB = 10 V, IE = -2 mA, f = 200 MHz R1 / R2 0.8 0.17 R1 Symbol VOH V OL Conditions VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k - 30% 4.7 10 47 1.0 0.21 150 1.2 0.25 MHz + 30% k Min 4.9 0.2 Typ Max Unit V V
Gain bandwidth product
Common characteristics chart PT Ta
150
Total power dissipation PT (mW)
125
100
75
50
25
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Characteristics charts of UP04210 I C VC E
Collector to emitter saturation voltage VCE(sat) (V)
120 IB = 1.0 mA 100 Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 60 0.2 mA 40 0.1 mA 10
VCE(sat) IC
IC / IB = 10
300
hFE IC
VCE = 10 V Ta = 75°C 25°C
80
1
Forward current transfer ratio hFE
250
Collector current IC (mA)
200
150
-25°C
0.1
25°C
Ta = 75°C
100
20
-25°C
50
0
0
2
4
6
8
10
12
0.01 0.1
1
10
100
0 0.1
1
10
100
1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJJ00002AED
UP04210/4211/4213/4214/4215/4216
IO VIN
10 VO = 5 V Ta = 25°C
VIN IO
100 VO = 0.2 V Ta = 25°C
Output current IO (mA)
Input voltage VIN (V)
0 0.5 1.0 1.5 2.0 2.5
10
1
1
0.1
0.1
1
10
100
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UP04211 I C VC E
IB = 1.0 mA 120 Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
1 IC / IB = 10
250
hFE IC
VCE = 10 V
140
Forward current transfer ratio hFE
Collector current IC (mA)
200
Ta = 75°C 25°C
100 80 60
Ta = 75°C 0.1 25°C
150
-25°C
100
0.2 mA 40 20 0.1 mA 0 0 2 4 6 8 10 12
-25°C
50
0.01
0
1
10
100
1 000
1
10
100
1 000
Collector to emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
IO VIN
f = 1 MHz Ta = 25°C
V IN I O
VO = 5 V Ta = 25°C
100
10
VO = 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
Output current IO (mA)
1
1
Input voltage VIN (V)
1 1.2 1.4 1.6 1.8 2
10
1
0.1
0.1
0.01
0 5 10 15 20 25 30 35
0.1 0.1
1
10
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJJ00002AED
3