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Details, datasheet, quote on part number:UP04217
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Datasheet text preview:
Composite Transistors
UP04217
Silicon NPN epitaxial planar type
Unit: mm
For switching/digital circuits Features
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
(0.30) 6 5 4
0 05 0.20+0..02
0.10±0.02
1.20±0.05
1.60±0.05
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
(0.20)
Display at No.1 lead
0.55±0.05
Basic Part Number
· UNR2217 (UN2217) × 2
5°
(0.20)
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol V CBO V CEO IC PT Tj Tstg
Rating 50 50 100 125 125 -55 to +125
Unit V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
Absolute Maximum Ratings Ta = 25°C
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: BS Internal Connection
6 5 4
Tr1
Tr2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
1
2
3
Min 50 50
Typ
Max
Unit V V µA µA mA V V
0.1 0.5 0.01 160 460 0.25 4.9 0.2 - 30% 22 150 + 30%
V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2004 SJJ00284AED
0.10 max.
1
UP04217
PT Ta
140 120
140 120 0.9 mA
IC VCE
IB = 1.0 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
1
Total power dissipation PT (mW)
Collector current IC (mA)
100 80 60 40 20 0
100 80
0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA
IC / IB = 10
0.2 mA 60 40 20 Ta = 25°C 0
0.1
Ta = 85°C -25°C 25°C 0.01 0.1
0.1 mA
0
20
40
60
80
100 120 140
0
2
4
6
8
10
12
1
10
100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
500 450 Ta = 85°C 25°C -25°C VCE = 10 V
Cob VCB
10 f = 1 MHz Ta = 25°C
100 VO = 5 V Ta = 25°C
I O VI N
Forward current transfer ratio hFE
400 350 300 250 200 150 100 50 0 1 10
Output current IO (mA)
1 0 10 20 30 40
10
1 0 1 2 3 4 5 6
100
1 000
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
100 VO = 0.2 V Ta = 25°C
Input voltage VIN (V)
10
1
0.1 1 10 100
Output current IO (mA)
2
SJJ00284AED
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