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Details, datasheet, quote on part number:UP04311
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| Part: | UP04311 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 7X ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = -50 ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(Tr2)(kW ) = 10 ;; Package = SSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP04311 datasheet File size : 110 kB |
| Request For quote: | Find where to buy UP04311
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Datasheet text preview:
Composite Transistors
UP04311
Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2)
For switching For digital circuits Features
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
(0.30) 6 5 4
0 05 0.20+0..02
Unit: mm
0.10±0.02
1.20±0.05
1.60±0.05
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
Display at No.1 lead
(0.20)
· UNR2211 (UN2211) + UNR2111 (UN2111)
Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector to base voltage Collector to emitter voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO V CEO IC VCBO V CEO IC PT Tj Tstg Rating 50 50 100 -5 0 -5 0 -100 125 125 -55 to +125 Unit V V mA V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: 7X Internal Connection
6 Tr1 Tr2 1 2 3 5 4
Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol V CBO V CEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Resistance ratio Transition frequency IEBO h FE VCE(sat) VOH V OL R1 R 1/ R 2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
Min 50 50
Typ
Max
Unit V V µA mA
0.1 0.5 0.5 35 0.25 4.9 0.2 - 30% 0.8 10 1.0 150 + 30% 1.2
V V V k MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2002 SJJ00253BED
0.10 max.
Basic Part Number of Element
5°
0.55±0.05
(0.20)
1
UP04311
Electrical Characteristics (continued) Ta = 25°C ± 3°C
· Tr2
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol V CBO V CEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Resistance ratio Transition frequency IEBO h FE VCE(sat) VOH V OL R1 R 1/ R 2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k - 30% 0.8 10 1.0 80 -4.9 - 0.2 + 30% 1.2 MHz 35 - 0.25 V V V k Min -5 0 -5 0 - 0.1 - 0.5 - 0.5 mA Typ Max Unit V V µA
Common characteristics chart PT Ta
140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
Characteristics charts of Tr1 I C VC E
120 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
1 IC / IB = 10
hFE IC
250 VCE = 10 V
140
Ta = 25°C
Forward current transfer ratio hFE
Collector current IC (mA)
200
Ta = 75°C 25°C
100 80 60
Ta = 75°C 0.1 25°C
150
-25°C
100
0.2 mA 40 20 0.1 mA 0 0 2 4 6 8 10 12
-25°C
50
0.01
1
10
100
1 000
0
1
10
100
1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJJ00253BED
UP04311
Cob VCB
10
IO VIN
f = 1 MHz Ta = 25°C
V IN I O
VO = 5 V Ta = 25°C
100
10
VO = 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
Output current IO (mA)
Input voltage VIN (V)
1 1.2 1.4 1.6 1.8 2
10
1
1
1
0.1
0.1
0.01
0 5 10 15 20 25 30 35
0.1 0.1
1
10
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of Tr2 I C VC E
Collector to emitter saturation voltage VCE(sat) (V)
-140 -120 Ta = 25°C
VCE(sat) IC
-10 -3 -1 Ta = 75°C 25°C -25°C IC / IB = 10
140 120 100
hFE IC
VCE = -10 V Ta = 75°C
IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA
-100 -80 -60 -40 -20
Forward current transfer ratio hFE
Collector current IC (mA)
- 0.3 - 0.1 - 0.03 - 0.01
25°C 80 -25°C 60 40 20 0 - 0.1
- 0.1 mA 0 0 -2 -4 -6 -8 -10 -12
- 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1 000
-1
-10
-100
-1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
100 f = 1 MHz Ta = 25°C
-10
IO VIN
VO = -5 V Ta = 25°C
V IN I O
-100 VO = - 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
Output current IO (mA)
Input voltage VIN (V)
10
-1
-10
1
- 0.1
-1
0.1
0
-5
-10 -15 -20 -25 -30 -35
- 0.01 -1.0
-1.2
-1.4
-1.6
-1.8
-2.0
- 0.1 - 0.1
-1
-10
-100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJJ00253BED
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