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Details, datasheet, quote on part number:UP04312
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| Part: | UP04312 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 7T ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = -50 ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 22 ;; R<SUB>2</SUB>(Tr2)(kW ) = 22 ;; Package = SSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP04312 datasheet File size : 109 kB |
| Request For quote: | Find where to buy UP04312
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Datasheet text preview:
Composite Transistors
UP04312
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
6 (0.30) 5 4
0 05 0.20+0..02
Unit: mm
0.10±0.02
1.20±0.05
Basic Part Number
· UNR2212 + UNR2112
Display at No.1 lead
(0.20)
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC V CBO V CEO IC PT Tj Tstg Rating 50 50 100 -5 0 -5 0 -100 125 125 -55 to +125 Unit V V mA V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: 7T Internal Connection
6 Tr1 Tr2 1 2 3 5 4
Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R1 / R 2 fT VCB = 10 V, IE = -1 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k - 30% 0.8 22 1.0 150 4.9 0.2 + 30% 1.2 60 0.25 Min 50 50 0.1 0.5 0.2 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.10 max.
5°
0.55±0.05
(0.20)
Features
1.60±0.05
Publication date: June 2003
SJJ00254CED
1
UP04312
Electrical Characteristics (continued) Ta = 25°C ± 3°C
· Tr2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R1 / R 2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k - 30% 0.8 22 1.0 80 -4.9 - 0.2 + 30% 1.2 60 - 0.25 Min -5 0 -5 0 - 0.1 - 0.5 - 0.2 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
140 120 100 80 60 40 20 0
Total power dissipation PT (mW)
0
20
40
60
80
100 120 140
Ambient temperature Ta (°C)
Characteristics charts of Tr1 I C VC E
Collector-emitter saturation voltage VCE(sat) (V)
160 140 Ta = 25°C 0.9 mA 0.8 mA IB = 1.0 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 100 0.3 mA 80 60 40 0.1 mA 20 0 0.2 mA 10
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V Ta = 75°C
Forward current transfer ratio hFE
Collector current IC (mA)
120
Ta = 75°C 1
300
25°C
-25°C 25°C 0.1
200
-25°C
100
0
2
4
6
8
10
12
0.01
1
10
100
1 000
0 0.1
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJJ00254CED
UP04312
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C 100
IO VIN
VO = 5 V Ta = 25°C
V IN I O
100 VO = 0.2 V Ta = 25°C
Output current IO (mA)
Input voltage VIN (V)
10
10
1
1
1
0.1
0.1
0
5
10
15
20
25
30
35
0.01
0
0.5
1.0
1.5
2.0
2.5
0.1 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of Tr2 I C VC E
Collector-emitter saturation voltage VCE(sat) (V)
-140 -120 - 0.9 mA - 0.8 mA - 0.7 mA Ta = 25°C IB = -1.0 mA
-10
VCE(sat) IC
IC / IB = 10
hFE IC
250 VCE = -10 V 25°C Ta = 75°C
Collector current IC (mA)
-100 -80 -60 -40 -20 0
- 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA
Ta = 75°C -1
Forward current transfer ratio hFE
200
150
-25°C
25°C
-25°C
100
- 0.1
50
0
-2
-4
-6
-8
-10
-12
- 0.01 -1
-10
-100
-1 000
0 - 0.1
-1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
-10 VO = -5 V Ta = 25°C
IO VIN
-100
V IN I O
VO = - 0.2 V Ta = 25°C
Output current IO (mA)
Input voltage VIN (V)
-10
1
-1
-1
0.1
0
-5
-10 -15 -20 -25 -30 -35
- 0.1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
- 0.1 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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