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Details, datasheet, quote on part number:UP04316
 
 
Part:UP04316
Category:Discrete => Transistors => Composite Transistors
Description:Marking = 7U ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = -50 ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSMini6-F1
Company:Panasonic Industrial Company/Electronic Components
Datasheet:Download UP04316 datasheet   File size : 84 kB
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Datasheet text preview:
Composite Transistors
UP04316
Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2)
For switching For digital circuit I Features
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
(0.30) 6 5 4
1.20±0.05 1.60±0.05
0 05 0.20+0..02 ­
Unit: mm
0.10±0.02
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05

(0.20)
Display at No.1 lead
0.55±0.05
· UNR1216 (UN1216) + UNR1116 (UN1116)
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 -5 0 -5 0 -1 0 0 125 125 -55 to +125 Unit V V mA V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: 7U Internal Connection
6 5 R2 Tr1 R1 1 2 3 Tr2 4
I Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol VCBO V CEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Transition frequency IEBO h FE VCE(sat) V OH VOL R1 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
Min 50 50
Typ
Max
Unit V V µA mA
0.1 0.5 0.01 160 460 0.25 4.9 0.2 -3 0 % 4.7 150 + 30%
V V V k MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002 SJJ00249AED
0.10 max.
I Basic Part Number of Element

(0.20)
1
UP04316
I Electrical Characteristics (continued) Ta = 25°C ± 3°C
· Tr2
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol VCBO V CEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Transition frequency IEBO h FE VCE(sat) V OH VOL R1 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k -3 0 % 4.7 80 - 4.9 - 0.2 + 30% 160 Min -5 0 -5 0 - 0.1 - 0.5 - 0.5 460 - 0.25 V V V k MHz mA Typ Max Unit V V µA
Common characteristics chart PT T a
250
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Characteristics chart of Tr1 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
160 Ta = 25°C 140 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25°C
VCE(sat) IC
IC / IB = 10 400 350
hFE IC
VCE = 10 V
Forward current transfer ratio hFE
Ta = 75°C 300 250 -25°C 200 150 100 50 25°C
Collector current IC (mA)
120 100 80 60 40 20
0 0 2 4
Ta = 75°C
0.1 mA
6 8 10 12
-25°C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA) SJJ00249AED
Collector current IC (mA)
2
UP04316
Cob VCB
6
IO VIN
f = 1 MHz IE = 0 Ta = 25°C
10 000 3 000 VO = 5 V Ta = 25°C
VIN IO
100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VO = 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
Input voltage VIN (V)
1 000
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics chart of Tr2 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
-160 -140 IB = -1.0 mA Ta = 25°C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 -60 -40 -20 0 -2 -4 -6 -8 - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -10 -12
-100 -30 -10 -3 -1 Ta = 75°C 25°C
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = -10 V
-120 -100
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta = 75°C
200
25°C -25°C
- 0.3
- 0.1
100
- 0.03
-25°C -1 -3 -10 -30 -100
- 0.01 - 0.1 - 0.3
0 -1
-3
-10
-30
-100 -300 -1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
6
IO VIN
f = 1 MHz IE = 0 Ta = 25°C
VIN IO
VO = -5 V Ta = 25°C
-100 -30 -10 -3 -1 VO = - 0.2 V Ta = 25°C
-10 000 -3 000
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
-300 -100 -30 -10 -3
3
2
1
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
-1 - 0.4
Input voltage VIN (V)
-1 000
- 0.3
- 0.1
- 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100
- 0.6
- 0.8
-1.0
-1.2
-1.4
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJJ00249AED
3