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Details, datasheet, quote on part number:UP04390
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Datasheet text preview:
Composite Transistors
UP04390
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
6 (0.30) 5 4
0 05 0.20+0..02
Unit: mm
0.10±0.02
1.20±0.05
Basic Part Number
· UNR1114 + UNR1213
Display at No.1 lead
(0.20)
· Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC V CBO V CEO IC PT Tj Tstg Rating 50 50 100 -5 0 -5 0 -100 125 125 -55 to +125 Unit V V mA V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: 3V Internal Connection
6 Tr1 Tr2 1 2 3 5 4
Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R 1/ R 2 fT VCB = 10 V, IE = -2 mA, f = 200MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k - 30% 0.8 4.7 1.0 150 4.9 0.2 + 30% 1.2 80 0.25 Min 50 50 0.1 0.5 0.1 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.10 max.
5°
0.55±0.05
(0.20)
Features
1.60±0.05
Publication date: April 2004
SJJ00288AED
1
UP04390
Electrical Characteristics (continued) Ta = 25°C ± 3°C
· Tr2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) VO H VOL R1 R 1/ R 2 fT VCB = -10 V, IE = 1 mA, f = 200MHz Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k - 30% 0.17 10 0.21 80 -4.9 - 0.2 + 30% 0.25 80 - 0.25 Min -5 0 -5 0 - 0.1 - 0.5 - 0.2 Typ Max Unit V V µA µA mA V V V k MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
140
Total power dissipation PT (mW)
120 100 80 60 40 20 0
0
20
40
60
80
100 120 140
Ambient temperature Ta (°C)
Characteristics charts of Tr1 I C VC E
0.8 mA 0.7 mA 0.6 mA 120 0.5 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC/IB = 10
350 VCE = 10 V
hFE IC
Ta = 85°C 25°C 250 -25°C
140
0.9 mA IB = 1.0 mA
10
100 0.4 mA 80 60 0.2 mA 40 20 0 0.1 mA Ta = 25°C 0 2 4 6 8 10 12 0.3 mA
1 Ta = 85°C 0.1
Forward current transfer ratio hFE
300
Collector current IC (mA)
200 150 100 50 0
25°C -25°C
0.01
0.001 0.1
1
10
100
1
10
100
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJJ00288AED
UP04390
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
IO VIN
100 VO = 0.2 V Ta = 25°C
V IN I O
0.1 VO = 5 V Ta = 25°C
Input voltage VIN (V)
Output current IO (A)
0.01
1
10
0.001
0.1
0
5
10
15
20
25
30
35
40
1 0.001
0.0001
0.01 0.1
0
2
4
6
8
10
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (A)
Characteristics charts of Tr2 I C VC E
Collector-emitter saturation voltage VCE(sat) (V)
-140 Ta = 25°C -120 IB = -10 mA -9 mA -8 mA -7 mA -6 mA -80 -60 -40 -2 mA -20 0 -1 mA 0 -2 -4 -6 -8 -10 -12 -5 mA -4 mA -3 mA
VCE(sat) IC
-10
250
hFE IC
VCE = -10 V
Forward current transfer ratio hFE
200
Ta = 85°C 25°C
Collector current IC (mA)
-100
-1
150 -25°C 100
- 0.1
Ta = 85°C -25°C IC/IB = 10 -1 -10 -100
25°C
50
- 0.01 - 0.1
0 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
IO VIN
-100 VO = -5 V Ta = 25°C
V IN I O
-100 VO = - 0.2 V Ta = 25°C
Output current IO (mA)
Input voltage VIN (V)
- 0.5 -1 -1.5 -2 -2.5
-10
-10
-1
-1
- 0.1
1 0 5 10 15 20 25 30 35 40
- 0.01
0
- 0.1 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJJ00288AED
3
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