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Details, datasheet, quote on part number:UP04501
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| Part: | UP04501 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 5H ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP04501 datasheet File size : 68 kB |
| Request For quote: | Find where to buy UP04501
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Datasheet text preview:
Composite Transistors
UP04501
Silicon NPN epitaxial planar transistor
Unit: mm
For general amplification
6
(0.30) 5 4
0 05 0.20+0..02
0.10±0.02
1.20±0.05
· Two elements incorporated into one package (Each transistor is separated) · Reduction of the mounting area and assembly cost by one half
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
I Basic Part Number of Element
· 2SD0601A (2SD601A) × 2 elements
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Rating of element Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Total power dissipation Total Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 7 100 200 125 125 -55 to +125 Unit V V V mA mA mW °C °C
Tr1
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: 5H Internal Connection
6 5 4
Tr2
1
2
3
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Symbol VCBO V CEO V EBO ICBO ICEO Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product h FE VCE(sat) Co b fT Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -2 mA, f = 200 MHz 3.5 150 180 Min 60 50 7 0.1 100 390 0.3 V pF MHz Typ Max Unit V V V µA
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002 SJJ00232AED
0.10 max.
5°
0.55±0.05
No.1 Pin indication
(0.20)
(0.20)
I Features
1.60±0.05
1
UP04501
PT T a
140 120
40 50 45 Ta = 25°C
IC VCE
IB = 160 µA 140 µA
160 140 VCE = 10 V Ta = 25°C
IC IB
Total power dissipation PT (mW)
Collector current IC (mA)
Collector current IC (mA)
100 80 60 40 20
35 30 25 20 15
120 µA 100 µA 80 µA 60 µA 40 µA
120 100 80 60 40 20 0
10 5 20 µA
0 0 20 40 60 80 100 120 140 160
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
IB VBE
10 VCE = 10 V 9 Ta = 25°C 8 120
IC VBE
Collector to emitter saturation voltage VCE(sat) (V)
VCE = 10 V 25°C
10 3 1 0.3 0.1 0.03 0.01
VCE(sat) IC
IC / IB = 10
100
7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8
Collector current IC (mA)
Base current IB (mA)
80
Ta = 75°C
-25°C
60
Ta = 75°C 25°C -25°C
40
20
0.003 0.001 0.1
0
0
0.2
0.4
0.6
0.8
1.0
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
400 360 VCE = 10 V Ta = 75°C 25°C -25°C
Forward current transfer ratio hFE
320 280 240 200 160 120 80 40 0 0.1 1
10
100
1 000
Collector current IC (mA)
2
SJJ00232AED
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