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Details, datasheet, quote on part number:UP04534
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| Part: | UP04534 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 7E ;; V<SUB>CEO</SUB>(V) = 20 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.015 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP04534 datasheet File size : 83 kB |
| Request For quote: | Find where to buy UP04534
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Datasheet text preview:
Composite Transistors
UP04534
Silicon NPN epitaxial planar type
For high-frequency amplification Features
· Two elements incorporated into one package (Each transistor is separated) · Reduction of the mounting area and assembly cost by one half
1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 (0.30) 6 5 4
1.20±0.05 1.60±0.05
0 05 0.20+0..02
Unit: mm
0.10±0.02
5°
(0.20)
Display at No.1 lead
0.55±0.05
Basic Part Number
· 2SC2404 × 2
5°
(0.20)
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol V CBO V CEO V EBO IC PT Tj Tstg
Rating 30 20 3 15 125 125 -55 to +125
Unit V V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
Absolute Maximum Ratings Ta = 25°C
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: 7E Internal Connection
6 5 4
Tr1
Tr2
1
2
3
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Reverse transfer capacitance (Common emitter) Transition frequency Noise figure Power gain Symbol V CBO V EBO VBE h FE C re fT NF GP Conditions IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA, f = 10.7 MHz VCB = 6 V, IE = -1 mA, f = 200 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz 450 65 0.8 650 3.3 24 Min 30 3 720 160 1.0 Typ Max Unit V V mV pF MHz dB dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.10 max.
Publication date: June 2003
SJJ00266BED
1
UP04534
PT Ta
150
14 12 Ta = 25°C
IC VCE
120 IB = 100 µA 100 80 µA 10 8 6 4 2 0 60 µA VCE = 6 V Ta = 25°C
IC I B
Total power dissipation PT (mW)
125
100
Collector current IC (mA)
Collector current IC (mA)
80
75
60
40 µA
50
40
20 µA
25
20
0 0 40 80 120 160
0 0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
I C VB E
VCE = 6 V
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 10
200
hFE IC
VCE = 6 V Ta = 75°C 25°C 120 -25°C 80
120
100
Collector current IC (mA)
Ta = 75°C
Forward current transfer ratio hFE
1 000
160
80 25°C -25°C
1
Ta = 75°C
60
-25°C 25°C 0.1
40
20
40
0
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
0 0.1
1
10
100
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
1
0.1
0
4
8 12 16 20 24 28 32 36 40
Collector-base voltage VCB (V)
2
SJJ00266BED
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