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Details, datasheet, quote on part number:UP04601
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| Part: | UP04601 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 5C ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = -50 ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SSMini6-F1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UP04601 datasheet File size : 94 kB |
| Request For quote: | Find where to buy UP04601
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Datasheet text preview:
Composite Transistors
UP04601
Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2)
For general amplification
6
Unit: mm
(0.30) 5 4
1.20±0.05 1.60±0.05
0 05 0.20+0..02
0.10±0.02
Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Total Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg
Rating 60 50 7 100 200 - 60 - 50 -7 - 100 - 200 125 125 -55 to +125
Unit V V V mA mA V V V mA mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
I Absolute Maximum Ratings Ta = 25°C
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: 5C Internal Connection
6 5 4
Tr1
Tr2
1
2
3
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002 SJJ00233AED
0.10 max.
· 2SD0601A (2SD601A) + 2SB0709A (2SB709A)
5°
0.55±0.05
I Basic Part Number of Element
No.1 Pin indication
(0.20)
· Two elements incorporated into one package (Each transistor is separated) · Reduction of the mounting area and assembly cost by one half
1
2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05
5°
(0.20)
I Features
1
UP04601
I Electrical Characteristics Ta = 25°C ± 3°C
· Tr1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Symbol VCBO V CEO V EBO ICBO ICEO Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product h FE VCE(sat) Co b fT Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -2 mA, f = 200 MHz 180 0.1 3.5 150 Min 60 50 7 0.1 100 390 0.3 V pF MHz Typ Max Unit V V V µA
· Tr2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Symbol VCBO V CEO V EBO ICBO ICEO Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product h FE VCE(sat) Co b fT Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VCE = -10 V, IC = -5 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 1 mA, f = 200 MHz 180 - 0.3 2.7 80 Min -60 -50 -7 - 0.1 - 100 390 - 0.5 V pF MHz Typ Max Unit V V V µA
Common characteristics chart PT T a
140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
2
SJJ00233AED
UP04601
Characteristics chart of Tr1 IC VCE
50 45 40 Ta = 25°C IB = 160 µA 140 µA
160 140 VCE = 10 V Ta = 25°C
IC IB
10 VCE = 10 V 9 Ta = 25°C 8
IB VBE
Collector current IC (mA)
Collector current IC (mA)
35 30 25 20 15
Base current IB (mA)
0.4
120 µA 100 µA 80 µA 60 µA 40 µA
120 100 80 60 40
7 6 5 4 3 2
10 5 0 0 2 4 6 8 20 µA
20 0
1
0 0.2 0.6 0.8 1.0 1.2
10
12
0
0
0.2
0.4
0.6
0.8
Collector to emitter voltage VCE (V)
Base current IB (mA)
Base to emitter voltage VBE (V)
IC VBE
120
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
VCE = 10 V 25°C
10 3 1 0.3 0.1 0.03 0.01 25°C Ta = 75°C -25°C IC / IB = 10
hFE IC
400 360 VCE = 10 V Ta = 75°C 25°C -25°C
Forward current transfer ratio hFE
100
320 280 240 200 160 120 80 40
Collector current IC (mA)
80
Ta = 75°C
-25°C
60
40
20
0.003 0.001
0
0
0.2
0.4
0.6
0.8
1.0
1
3
10
30
100
300
1 000
0
1
10
100
1 000
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25°C
3
1 0 5 10
15
20
25
30
35
40
Collector to base voltage VCB (V)
SJJ00233AED
3
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