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Details, datasheet, quote on part number:XN01112XN1112
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Datasheet text preview:
Composite Transistors
XN01112 (XN1112)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
0 20 2.90+0..05 1.9±0.1
0 10 0.16+0..06
(0.95) (0.95)
s Features
q q
3
4
5
0 25 1.50+0..05 02 2.8+0..3
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2
0 10 0.30+0..05
1 (0.65)
02 1.1+0..1
q
UNR1112(UN1112) × 2 elements
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 300 150 55 to +150 Unit V V mA mW °C °C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2)
4 : Emitter 5 : Base (Tr1) EIAJ : SC74A Mini5-G1 Pakage
Marking Symbol: 7K Internal Connection
5 4 3 2 Tr1 1
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
*1
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = 1mA, f = 200MHz 30% 0.8 80 22 1.0 +30% 1.2 4.9 0.2 60 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.2 typ max Unit V V µA µA mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
03 1.1+0..1
s Basic Part Number of Element
10°
0.4±0.2
5°
1
Composite Transistors
PT -- Ta
500
XN01112
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (°C)
IC -- VCE
160 140 Ta=25°C IB= 1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 80 60 40 20 0 0 2 4 6 8 10 12 0.4mA 0.3mA 0.2mA 0.1mA
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10
400 VCE= 10V
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 0.1 25°C 0.03 0.01 0.1 0.3
Forward current transfer ratio hFE
Collector current IC (mA)
120 100
300
Ta=75°C 200 25°C 25°C 100
25°C
Ta=75°C
1
3
10
30
100
0 1
3
10
30
100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25°C 10000 3000 VO= 5V Ta=25°C 100 30
VIN -- IO
VO= 0.2V Ta=25°C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1 0.3
3
2
1
0 0.1 0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
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