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Details, datasheet, quote on part number:XN01116
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| Part: | XN01116 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 7N ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.3 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = Mini5-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download XN01116 datasheet File size : 49 kB |
| Request For quote: | Find where to buy XN01116
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Datasheet text preview:
Composite Transistors
XN01116 (XN1116)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
0 20 2.90+0..05 1.9±0.1 (0.95) (0.95)
0 10 0.16+0..06
0 25 1.50+0..05
s Features
q q
3
4
5
02 2.8+0..3
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2
0 10 0.30+0..05
1 (0.65)
10°
02 1.1+0..1 03 1.1+0..1
s Basic Part Number of Element
q
UNR1116(UN1116) × 2 elements
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 300 150 55 to +150 Unit V V mA mW °C °C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2)
4 : Emitter 5 : Base (Tr1) EIAJ : SC74A Mini5-G1 Pakage
Marking Symbol: 7N Internal Connection
5 4 3 2 Tr1 1
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
*1
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = 1mA, f = 200MHz 30% 80 4.7 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.01 460 typ max Unit V V µA µA mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
0.4±0.2
5°
1
Composite Transistors
PT -- Ta
500
XN01116
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (°C)
IC -- VCE
160
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10
400 VCE= 10V
Collector current IC (mA)
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
30 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 25°C Ta=75°C
120 100 80 60 40 20 0 0 2 4 6 8
Forward current transfer ratio hFE
140
IB= 1.0mA
Ta=25°C
Collector to emitter saturation voltage VCE(sat) (V)
300 Ta=75°C
0.4mA 0.3mA 0.2mA
200 25°C
25°C 100
0.1mA
25°C
10
12
1
3
10
30
100
0 1
3
10
30
100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
I f=1MHz T =0 E a=25°C 10000 3000 VO= 5V T a=25°C 100 30
VIN -- IO
T O= 0.2V V a=25°C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1 0.3
3
2
1
0 0.1 0.3
1
3
10
30
100
1 0.4
1
3
10
30
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
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