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Details, datasheet, quote on part number:XN0111H
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| Part: | XN0111H |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 9X ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.3 ;; R<SUB>1</SUB>(kW ) = 2.2 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = Mini5-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download XN0111H datasheet File size : 48 kB |
| Request For quote: | Find where to buy XN0111H
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Datasheet text preview:
Composite Transistors
XN0111H (XN111H)
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
0 20 2.90+0..05 1.9±0.1 (0.95) (0.95)
0 10 0.16+0..06
0 25 1.50+0..05
s Features
q q
3
4
5
02 2.8+0..3
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2
0 10 0.30+0..05
1 (0.65)
10°
02 1.1+0..1 03 1.1+0..1
s Basic Part Number of Element
q
UNR111H(UN111H) × 2 elements
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 300 150 55 to +150 Unit V V mA mW °C °C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2)
4 : Emitter 5 : Base (Tr1) EIAJ : SC74A Mini5-G1 Pakage
Marking Symbol: 9X Internal Connection
5 4 3 2 Tr1 1
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
*1
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = 1mA, f = 200MHz 30% 0.17 80 2.2 0.22 +30% 0.27 4.9 0.2 30 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.5 typ max Unit V V µA µA mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
0.4±0.2
5°
1
Composite Transistors
PT -- Ta
500
XN0111H
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (°C)
IC -- VCE
120 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25°C IC/IB=10
hFE -- IC
240 VCE= 10V
100
Forward current transfer ratio hFE
200
Collector current IC (mA)
10
80
IB= 0.5mA 0.4mA
160 Ta=75°C 120 25°C 80 25°C 40
60 0.3mA 40 0.2mA 20 0.1mA 0 0 2 4 6 8 10 12
1 Ta=75°C 25°C 0.1 25°C
0.01 1
3
10
30
100 300 1000
0 0.1 0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
VIN -- IO
I f=1MHz T =0 E a=25°C
100
Collector output capacitance Cob (pF)
T O= 0.2V V a=25°C
5
4
3
Input voltage VIN (V)
10
1
2
0.1
1
0 1
3
10
30
100
0.01 0.1 0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Output current IO (mA)
2
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