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Details, datasheet, quote on part number:XN0111M
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| Part: | XN0111M |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = ek ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.3 ;; R<SUB>1</SUB>(kW ) = 2.2 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = Mini5-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download XN0111M datasheet File size : 49 kB |
| Request For quote: | Find where to buy XN0111M
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Datasheet text preview:
Composite Transistors
XN0111M (XN111M)
PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
0 20 2.90+0..05 1.9±0.1 (0.95) (0.95)
0 10 0.16+0..06
0 25 1.50+0..05
s Features
q q
3
4
5
02 2.8+0..3
10°
02 1.1+0..1 03 1.1+0..1
s Basic Part Number of Element
q
UNR211M(UN211M) × 2 elements
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 300 150 55 to +150 Unit V V mA mW °C °C
1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2)
4 : Emitter 5 : Base (Tr1) EIAJ : SC74A Mini5-G1 Pakage
Marking Symbol: EK Internal Connection
5 4 3 2 Tr1 1
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
*1
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = 1mA, f = 200MHz Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k 30% 2.2 0.047 80 MHz 4.9 0.2 +30% 80 0.5 0.99 0.09 0.25 V V V k min 50 50 0.1 0.5 0.2 typ max Unit V V µA µA mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
(0.65)
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2
0 10 0.30+0..05
1
0.4±0.2
5°
1
Composite Transistors
PT -- Ta
500
XN0111M
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (°C)
IC -- VCE
240 10
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25°C IC/IB=10 500
hFE -- IC
VCE= 10V
3 1 0.3 0.1 0.03 0.01 0.003 0.001 1 25°C Ta=75°C
200
Forward current transfer ratio hFE
Collector current IC (mA)
160
IB= 1.0mA 0.9mA 0.8mA 0.7mA 0.6mA
400
300
120
200
Ta=75°C 25°C 25°C
80
0.5mA 0.4mA 0.3mA
25°C
40
100
0.2mA 0.1mA
0 0 2 4 6 8 10 12
3
10
30
100 300 1000
0 1
3
10
30
100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
10
IO -- VIN
104
I f=1MHz T =0 E a=25°C
VIN -- IO
VO= 5V T a=25°C
100 30 T O= 0.2V V a=25°C
Collector output capacitance Cob (pF)
8
Output current IO (µA)
Input voltage VIN (V)
103
10 3 1 0.3 0.1 0.03
6
102
4
101
2
0 0.1 0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1 0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
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