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Details, datasheet, quote on part number:XP01110XP1110
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Datasheet text preview:
Composite Transistors
XP01110 (XP1110)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
(0.425)
Unit: mm
0 05 0.12+0..02
0.20±0.05 5 4
1.25±0.10 2.1±0.1
1
2
3
G
(0.65) (0.65) 1.3±0.1 2.0±0.1 10°
0.9±0.1
G
UNR1110(UN1110) × 2 elements
I Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 150 150 55 to +150 Unit V V mA mW °C °C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC88A SMini5-G1 Package
Marking Symbol: AD Internal Connection
1 2 3 4 Tr1 5
Tr2
I Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
*1
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = 1mA, f = 200MHz 30% 80 47 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.01 460 typ max Unit V V µA µA mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
02 0.9+0..1
I Basic Part Number of Element
5°
G
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
0.2±0.1
I Features
1
Composite Transistors
PT -- Ta
250
XP01110
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC -- VCE
120
100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 400
hFE -- IC
VCE= 10V
30 10 3 1 Ta=75°C 0.3 0.1 0.03 25°C 25°C
Forward current transfer ratio hFE
Collector current IC (mA)
Ta=25°C IB=1.0mA 0.9mA 100 0.8mA 0.7mA 0.6mA 0.5mA 80 0.4mA 0.3mA 60 0.2mA 40 0.1mA 20
300 Ta=75°C
200
25°C 25°C
100
0 0 2 4 6 8 10 12
0.01 0.1 0.3
1
3
10
30
100
0 1
3
10
30
100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6 10000 f=1MHz IE=0 Ta=25°C 3000
I O -- V IN
VO= 5V Ta=25°C 100 30
VIN -- IO
VO= 0.2V Ta=25°C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
300 100 30 10 3
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000
10 3 1 0.3 0.1 0.03 0.01 0.1 0.3
3
2
1
0 0.1 0.3
1
3
10
30
100
1 0.4
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
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