|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01115XP1115 datasheet
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.I Basic Part Number of Element I Absolute Maximum Ratings
Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO PT Tj Tstg4 : Collector 5 : Collector (Tr1) EIAJ : SC88A SMini Type Package (5pin)
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote.) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP01116 Marking = 7N ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01117 Marking = ol ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01118 Marking = om ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 0.51 ;; R2(Tr2)(kW|
|XP01119 Marking = 7P ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 1 ;; R2(Tr2)(kW|
|XP0111F Marking = 7O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0111H Marking = 9X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0111M Marking = ek ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP01210 Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01211 Marking = 9T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
P-25AAA L5X2 : Battery Pack Battery Product; BATTERY PACK NICAD 12V 250MAH Specifications: Battery Cell Size: AAA ; Number of Cells: 10 ; Voltage - Rated: 12V ; Capacity: 250mAh @ 50mA ; Structure: Front to Back, 2 Rows x 5 Cells ; Rechargeability: Yes ; Termination Style: Solder Tab ; Battery Chemistry: Nickel Cadmium ; Weight: - ; Lead Free Status: Lead Free ; RoHS Statu
EEE-HC1H1R0R : 1.0µF Aluminum Capacitor Radial, Can - SMD 50V; CAP ALUM 1UF 50V 20% SMD Specifications: Capacitance: 1.0µF ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 3000 Hrs @ 105°C ; Size / Dimension: 0.157" Dia (4.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.169" L x 0.169" W (4.30mm x 4.30mm) ; Mounting Type: Surface Mount ; Pack
ECJ-TVC1H470K : 47pF Array Capacitor 0805 (2012 Metric) 50V; CAP ARRAY 47PF 50V NP0 0805 Specifications: Capacitance: 47pF ; Voltage - Rated: 50V ; Tolerance: ±10% ; Package / Case: 0805 (2012 Metric) ; Packaging: Cut Tape (CT) ; Mounting Type: Surface Mount ; Temperature Coefficient: C0G, NP0 ; Dielectric Material: Ceramic ; Circuit Type: Isolated ; Number of Capacitors: 4 ; Lead Free
ECQ-U2A823MLA : 0.082µF Film Capacitor Radial; CAP FILM 0.082UF 275VAC RADIAL Specifications: Capacitance: 0.082µF ; Tolerance: ±20% ; Dielectric Material: Polyester, Metallized ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.591" (15.00mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: EMI Suppression ; Lead Free Status: Lead F
ECW-H8242HL : 2400pF Film Capacitor Radial; CAP FILM 2400PF 800VDC RADIAL Specifications: Capacitance: 2400pF ; Tolerance: ±3% ; Dielectric Material: Polypropylene, Metallized ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.591" (15.00mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: General Purpose ; Lead Free Status: Lead
ELJ-FC6R8JF : Fixed Inductors, Coils, Choke 6.8µH 115mA 1008 (2520 Metric) -; INDUCTOR 6.8UH 5% FIXED SMD Specifications: Inductance: 6.8µH ; Tolerance: ±5% ; Package / Case: 1008 (2520 Metric) ; Packaging: Digi-Reel® ; Type: - ; Current: 115mA ; Mounting Type: Surface Mount ; Q @ Freq: 25 @ 7.96MHz ; Frequency - Self Resonant: 45MHz ; DC Resistance (DCR): 1.95 Ohm Max ; Shielding: Unshielded ; Applicat
EXB-24V6R8JX : Resistor 6.8 Ohm 62.5mW 2 Resistors[number of pins] Pin Networks, Arrays; RES ARRAY 6.8 OHM 2 RES 0404 Specifications: Resistance (Ohms): 6.8 ; Tolerance: ±5% ; Power Per Element: 62.5mW ; Circuit Type: Isolated ; Number of Pins: 4 ; Packaging: Digi-Reel® ; Number of Resistors: 2 ; Package / Case: 0404 (1010 Metric), Convex ; Mounting Type: Surface Mount ; Temperature Coefficient: ±200ppm/°C ; Lead F
EVM-EGSA00B22 : Ohm Trimmer Potentiometers, Variable Resistors Side Adjustment Single Turn; TRIMMER 200 OHM 0.3W TH Specifications: Resistance (Ohms): 200 ; Power (Watts): 0.3W ; Number of Turns: Single ; Package / Case: Square - 0.276" L x 0.252" W x 0.323" H (7.00mm x 6.40mm x 8.20mm) ; Adjustment Type: Side Adjustment ; Tolerance: ±25% ; Mounting Type: Through Hole ; Temperature Coefficient: ±200ppm/°C ; Resis
EETUQ1J103D : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 63 V, 10000 uF, THROUGH HOLE MOUNT Specifications: RoHS Compliant: Yes ; Features: Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 63 volts ; Leakage Current: 2381 microamps ; ESR: 41 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F)
1N4004A : Technical s of Silicon Rectifier. Ib`a i^dbZ[bdbkp Lgn d^ZcZ`^ Lgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp DZj^? Mgd]^] hdZjkb\ Fhgop? TL >9U25 iZk^ _dZe^ i^kZi]Zfk L^Z]? MJL2RSE2757F1 M^kag] 75= `lZiZfk^^] PgdZibkp? Dgdgi [Zf] ]^fgk^j \Zkag]^ ^f] Mglfkbf` hgjbkbgf? Bfp V^b`ak? 5377 `iZe QZkbf`j g D Ze[b^fk k^eh^iZkli^ lfd^jj gka^inbj^ jh^\b_b^]3 Rbf`d^ haZj^1 aZd_ ;5 Iq1 i^jbjkbm^.
1N4937 : 1 Amp Fast Recovery Rectifier 50 - 600v. Low Leakage Current Metallurgical Bonded Construction Low Cost Fast Switching Operating Temperature: to +150°C Storage Temperature: to +150°C Maximum Thermal Resistance; 30°C/W Junction To Lead Maximum Recurrent Peak Reverse Voltage 400V 600V Maximum DC Blocking Voltage 400V 600V Average Forward Current Peak Forward Surge Current Maximum Instantaneous.
1N5823 : Schottky Rectifier, Package : Top_hat.
28N60BD1 : Low Voltage < 600 Volts. Low V Ce(sat) Igbt With Diode. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Test Conditions to 150°C; RGE 1 MW Continuous Transient 1 ms VGE= 15 V, TVJ 10 W Clamped inductive load, = 25°C Maximum Ratings ICM VCES °C g International standard.
2SK2684 : Silicon N Channel Dv-l MOS Fet High Speed Power Switching: 30v, 30a. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
BAS40-06-7 : Surface Mount Schottky Barrier Diode. SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Below Weight:.
BUK474-200A : BUK474-200A/B; Powermos Transistor ISOlated Version of BUK454-200A/B. N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK474 Drain-source voltage Drain current (DC) Total power.
SIDC185D350FS : HV Chips. Used For Lowloss IGBT2. : 3500V EMCONHV technology soft , fast switching low reverse recovery charge small temperature coefficient This chip is used for: power modules Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size.
SRA2202S : PNP Silicon Transistor. Switching application Interface circuit and driver circuit application With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature Output Cut-off Current DC Current Gain Output Voltage Input.
SRC1201M : NPN Silicon Transistor. Switching application Interface circuit and driver circuit application With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature Output Cut-off Current DC Current Gain Output Voltage Input.
05002300AKZC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.00003 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 3.00E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface Mount Technology.
05002360CGZP : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000036 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 3.60E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface Mount Technology.
0873-2X4R-98 : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.
IGC07T120T6L : 1200 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: 2.72 X 2.54 MM, DIE-2 ; Number of units in IC: 1.
SMW513RJT : RESISTOR, WIRE WOUND, 5 W, 5 %, 200 ppm, 13 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 13 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 200 Â±ppm/Â°C ; Power Rating: 5 watts (0.0067 HP) ; Operating.
TIP120J69Z : 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.
TPC6604 : 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: ROHS COMPLIANT, 2-3T1C, 6 PIN.
TSP801R1000DUF : RESISTOR, NETWORK, FILM, BUSSED, 0.5 W, THROUGH HOLE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: ThroughHole, SIP ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 25 Â±ppm/Â°C ; Power Rating: 0.5000 watts (6.70E-4 HP) ; Operating DC Voltage: 100 volts.
TX1176 : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).