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Details, datasheet, quote on part number:XP01116
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| Part: | XP01116 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 7N ;; V<SUB>CEO</SUB>(V) = -50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = -0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini5-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download XP01116 datasheet File size : 404 kB |
| Request For quote: | Find where to buy XP01116
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Datasheet text preview:
Composite Transistors
XP01116 (XP1116)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
(0.425)
Unit: mm
0 05 0.12+0..02
0.20±0.05 5 4
1.25±0.10 2.1±0.1
1
2
3
G
(0.65) (0.65) 1.3±0.1 2.0±0.1 10°
0.9±0.1
G
UNR1116(UN1116 )× 2 elements
I Absolute Maximum Ratings
Parameter Rating of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 150 150 55 to +150 Unit V V mA mW °C °C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC88A SMini5-G1 Package
Marking Symbol: 7N Internal Connection
1 2 3 4 Tr1 5
Tr2
I Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
*1
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = 1mA, f = 200MHz 30% 80 4.7 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.01 460 typ max Unit V V µA µA mA
Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
02 0.9+0..1
I Basic Part Number of Element
5°
G
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
0.2±0.1
I Features
1
Composite Transistors
PT -- Ta
250
XP01116
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC -- VCE
160
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10
400 VCE= 10V
Collector current IC (mA)
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
30 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 25°C Ta=75°C
120 100 80 60 40 20 0 0 2 4 6 8
Forward current transfer ratio hFE
140
IB= 1.0mA
Ta=25°C
Collector to emitter saturation voltage VCE(sat) (V)
300 Ta=75°C
0.4mA 0.3mA 0.2mA
200 25°C
25°C 100
0.1mA
25°C
10
12
1
3
10
30
100
0 1
3
10
30
100 300 1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
I O -- V IN
f=1MHz IE=0 Ta=25°C 10000 3000 VO= 5V Ta=25°C 100 30
VIN -- IO
VO= 0.2V Ta=25°C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1 0.3
3
2
1
0 0.1 0.3
1
3
10
30
100
1 0.4
1
3
10
30
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
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