|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01116XP1116 datasheet
Parameter Rating of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP01117 Marking = ol ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01118 Marking = om ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 0.51 ;; R2(Tr2)(kW|
|XP01119 Marking = 7P ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 1 ;; R2(Tr2)(kW|
|XP0111F Marking = 7O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0111H Marking = 9X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0111M Marking = ek ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP01210 Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01211 Marking = 9T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
MA3S795D : VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.3 ;; IR(µA) = 30 ;; Package = SSMini3-F2
PN163NC : Silicon NPN Phototransistor
EEU-EB1E331B : 330µF Aluminum Capacitor Radial, Can 25V; CAP ALUM 330UF 25V 20% RADIAL Specifications: Capacitance: 330µF ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 10000 Hrs @ 105°C ; Size / Dimension: 0.315" Dia (8.00mm) ; Lead Spacing: 0.197" (5.00mm) ; Surface Mount Land Size: - ; Mounting Type: Through Hole ; Package / Case: Radial, Ca
ECQ-E10333JF : 0.033µF Film Capacitor Radial; CAP FILM 0.033UF 1KVDC RADIAL Specifications: Capacitance: 0.033µF ; Tolerance: ±5% ; Dielectric Material: Polyester, Metallized ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.689" (17.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: General Purpose ; Lead Free Status: Lead Fr
ECQ-E4125JF : 1.2µF Film Capacitor Radial; CAP FILM 1.2UF 400VDC RADIAL Specifications: Capacitance: 1.2µF ; Tolerance: ±5% ; Dielectric Material: Polyester, Metallized ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.886" (22.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: General Purpose ; Lead Free Status: Lead Free
ECH-U1H181JX5 : 180pF Film Capacitor 0805 (2012 Metric); CAP FILM 180PF 50VDC 0805 Specifications: Capacitance: 180pF ; Tolerance: ±2% ; Dielectric Material: Polyphenylene Sulphide (PPS) ; Package / Case: 0805 (2012 Metric) ; Packaging: Digi-Reel® ; Lead Spacing: - ; ESR (Equivalent Series Resistance): - ; Mounting Type: Surface Mount ; Features: General Purpose ; Lead Free Status
ECW-H12242RHV : 2400pF Film Capacitor Radial; CAP FILM 2400PF 1.25KVDC RADIAL Specifications: Capacitance: 2400pF ; Tolerance: ±3% ; Dielectric Material: Polypropylene, Metallized ; Package / Case: Radial ; Packaging: Tape & Box (TB) ; Lead Spacing: 0.295" (7.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: High Frequency and High St
AN78L08 : Pmic - Voltage Regulator - Linear Integrated Circuit (ics); IC REG LDO 8V 100MA TO-92 Specifications: Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERJ-2BQFR39X : 0.39 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RESISTOR .39 OHM 1/8W 1% 0402 Specifications: Resistance (Ohms): 0.39 ; Power (Watts): 0.125W, 1/8W ; Tolerance: ±1% ; Packaging: Digi-Reel® ; Composition: Thick Film ; Temperature Coefficient: ±250ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
XP0550100L : Transistor (bjt) - Array Discrete Semiconductor Product 100mA 50V 150mW 2 NPN (Dual); TRANS ARRAY NPN/NPN SMINI-6 Specifications: Transistor Type: 2 NPN (Dual) ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 150mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA ; Frequency - Transition: 150MHz
DRA2143X : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR Specifications: Polarity: PNP ; Package Type: ROHS COMPLIANT, MINI3-G3-B, 3 PIN
2SC5288 : NPN Silicon Epitaxial Transistor For L-band Low-power Amplifier. NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). Packing Style Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. +0.2 0.1 Remark If you require an evaluation sample, please contact an NEC Sales.
2SJ545 : for General Switching. Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
BSP299Q67000-S225 : Transistor MOSFET Sot223. SIPMOS ® Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Maximum Ratings Parameter Continuous drain current Symbol Values 0.4 Unit A Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering.
BTA208X : BTA208X Series D/e And F; Three Quadrant Triacs Guaranteed Commutation.
BUV37 : Tv vertical deflection applications. IC(A) = 15, VCBO(V) = 400, VCEO(V) = 400, PD(W) = 100, Package = TO-3P, HFE(Min/Max) = 20, IC/VCE(A/V) = 15/5.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 7.0/70.
EMIF6-100FC : EMI Filter/TVS Arrays. Stand-off Voltage = 5 ;; Clamping Voltage @ Ipp = N/a ;; Leakage Current µA = .1 ;; Maximum Capacitance PF = 54 ;; Power Watts = N/a ;; Package = 15 Bump FC.
SMBD914/MMBD914 : Diodes For High Speed Switching Applications. Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, 1 µs Total power dissipation TS 54°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) SMBD914/MMBD914 calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics = 25°C,.
XN04112 : Composite Transistors. Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.3 ;; R1(kW ) = 22 ;; R2(Tr2)(kW ) = ;; Package = Mini6-G1.
B40D100LPBF : 40 A, 1000 V, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 40000 mA ; RoHS Compliant: RoHS ; Package: POWER MODULE-3 ; Pin Count: 3 ; Number of Diodes: 2.
CHPHR0805K1000FB : RES,SMT,THICK FILM,100 OHMS,1% +/-TOL,-100,100PPM TC,0805 CASE. s: Category / Application: General Use.
K3520PQ-XH : 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 24 volts ; rDS(on): 0.0200 ohms ; Package Type: 2 X 1.08 MM, DIE-4 ; Number of units in IC: 2.
LQN2AR10K04M01 : 1 ELEMENT, 0.1 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: ALUMINA ; Lead Style: J ; Application: General Purpose, RF Choke ; Inductance Range: 0.1000 microH ; Rated DC Current: 380 milliamps.
RJC07RB100K : RESISTOR, TRIMMER, CERMET, 13 TURN(S), 0.75 W, 10 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole ; Resistance Range: 10 ohms ; Tolerance: 10 +/- % ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.
TTC3A102F39D1EY : RESISTOR, TEMPERATURE DEPENDENT, NTC, 1 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 1 ohms ; Tolerance: 1 +/- % ; Power Rating: 0.1500 watts (2.01E-4 HP) ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Standards and Certifications:.
2N4075 : 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111. s: Polarity: NPN.
600HR033 : RESISTOR, CURRENT SENSE, METAL STRIP, 0.1 W, 3 %, 0.033 ohm, THROUGH HOLE MOUNT. s: Category / Application: Current Sensing, General Use ; Technology / Construction: METAL STRIP ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 0.0330 ohms ; Tolerance: 3 +/- % ; Power Rating: 0.1000 watts (1.34E-4 HP) ; Operating Temperature:.