|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01116XP1116 datasheet
Parameter Rating of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP01117 Marking = ol ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01118 Marking = om ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 0.51 ;; R2(Tr2)(kW|
|XP01119 Marking = 7P ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 1 ;; R2(Tr2)(kW|
|XP0111F Marking = 7O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0111H Marking = 9X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0111M Marking = ek ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP01210 Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01211 Marking = 9T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
2SC5288 : NPN Silicon Epitaxial Transistor For L-band Low-power Amplifier. NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). Packing Style Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. +0.2 0.1 Remark If you require an evaluation sample, please contact an NEC Sales.
2SJ545 : for General Switching. Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
BSP299Q67000-S225 : Transistor MOSFET Sot223. SIPMOS ® Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Maximum Ratings Parameter Continuous drain current Symbol Values 0.4 Unit A Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering.
BTA208X : BTA208X Series D/e And F; Three Quadrant Triacs Guaranteed Commutation.
BUV37 : Tv vertical deflection applications. IC(A) = 15, VCBO(V) = 400, VCEO(V) = 400, PD(W) = 100, Package = TO-3P, HFE(Min/Max) = 20, IC/VCE(A/V) = 15/5.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 7.0/70.
EMIF6-100FC : EMI Filter/TVS Arrays. Stand-off Voltage = 5 ;; Clamping Voltage @ Ipp = N/a ;; Leakage Current µA = .1 ;; Maximum Capacitance PF = 54 ;; Power Watts = N/a ;; Package = 15 Bump FC.
SMBD914/MMBD914 : Diodes For High Speed Switching Applications. Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, 1 µs Total power dissipation TS 54°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) SMBD914/MMBD914 calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics = 25°C,.
XN04112 : Composite Transistors. Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.3 ;; R1(kW ) = 22 ;; R2(Tr2)(kW ) = ;; Package = Mini6-G1.
B40D100LPBF : 40 A, 1000 V, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 40000 mA ; RoHS Compliant: RoHS ; Package: POWER MODULE-3 ; Pin Count: 3 ; Number of Diodes: 2.
CHPHR0805K1000FB : RES,SMT,THICK FILM,100 OHMS,1% +/-TOL,-100,100PPM TC,0805 CASE. s: Category / Application: General Use.
K3520PQ-XH : 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 24 volts ; rDS(on): 0.0200 ohms ; Package Type: 2 X 1.08 MM, DIE-4 ; Number of units in IC: 2.
LQN2AR10K04M01 : 1 ELEMENT, 0.1 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: ALUMINA ; Lead Style: J ; Application: General Purpose, RF Choke ; Inductance Range: 0.1000 microH ; Rated DC Current: 380 milliamps.
RJC07RB100K : RESISTOR, TRIMMER, CERMET, 13 TURN(S), 0.75 W, 10 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole ; Resistance Range: 10 ohms ; Tolerance: 10 +/- % ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.
TTC3A102F39D1EY : RESISTOR, TEMPERATURE DEPENDENT, NTC, 1 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 1 ohms ; Tolerance: 1 +/- % ; Power Rating: 0.1500 watts (2.01E-4 HP) ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Standards and Certifications:.
2N4075 : 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111. s: Polarity: NPN.
600HR033 : RESISTOR, CURRENT SENSE, METAL STRIP, 0.1 W, 3 %, 0.033 ohm, THROUGH HOLE MOUNT. s: Category / Application: Current Sensing, General Use ; Technology / Construction: METAL STRIP ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 0.0330 ohms ; Tolerance: 3 +/- % ; Power Rating: 0.1000 watts (1.34E-4 HP) ; Operating Temperature:.