Details, datasheet, quote on part number: XP01116XP1116
PartXP01116XP1116
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload XP01116XP1116 datasheet
  

 

Features, Applications

Parameter Rating of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO PT Tj Tstg

Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance

Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit A mA

Note) The Part number in the Parenthesis shows conventional part number.

Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.



Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.

Please read the following notes before using the datasheets

A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.


 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
XP01117 Marking = ol ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW
XP01117XP1117
XP01118 Marking = om ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 0.51 ;; R2(Tr2)(kW
XP01118XP1118
XP01119 Marking = 7P ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 1 ;; R2(Tr2)(kW
XP01119XP1119
XP0111F Marking = 7O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW
XP0111FXP111F
XP0111H Marking = 9X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW
XP0111HXP111H
XP0111M Marking = ek ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW
XP01210 Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP01210XP1210
XP01211 Marking = 9T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP01211XP1211
XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW
XP01212XP1212
XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP01213XP1213
XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP01214XP1214
Same catergory

2SC5288 : NPN Silicon Epitaxial Transistor For L-band Low-power Amplifier. NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.). Packing Style Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. +0.2 0.1 Remark If you require an evaluation sample, please contact an NEC Sales.

2SJ545 : for General Switching. Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

BSP299Q67000-S225 : Transistor MOSFET Sot223. SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Maximum Ratings Parameter Continuous drain current Symbol Values 0.4 Unit A Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering.

BTA208X : BTA208X Series D/e And F; Three Quadrant Triacs Guaranteed Commutation.

BUV37 : Tv vertical deflection applications. IC(A) = 15, VCBO(V) = 400, VCEO(V) = 400, PD(W) = 100, Package = TO-3P, HFE(Min/Max) = 20, IC/VCE(A/V) = 15/5.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 7.0/70.

EMIF6-100FC : EMI Filter/TVS Arrays. Stand-off Voltage = 5 ;; Clamping Voltage @ Ipp = N/a ;; Leakage Current A = .1 ;; Maximum Capacitance PF = 54 ;; Power Watts = N/a ;; Package = 15 Bump FC.

SMBD914/MMBD914 : Diodes For High Speed Switching Applications. Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, 1 s Total power dissipation TS 54C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) SMBD914/MMBD914 calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics = 25C,.

XN04112 : Composite Transistors. Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.3 ;; R1(kW ) = 22 ;; R2(Tr2)(kW ) = ;; Package = Mini6-G1.

B40D100LPBF : 40 A, 1000 V, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 40000 mA ; RoHS Compliant: RoHS ; Package: POWER MODULE-3 ; Pin Count: 3 ; Number of Diodes: 2.

CHPHR0805K1000FB : RES,SMT,THICK FILM,100 OHMS,1% +/-TOL,-100,100PPM TC,0805 CASE. s: Category / Application: General Use.

K3520PQ-XH : 24 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 24 volts ; rDS(on): 0.0200 ohms ; Package Type: 2 X 1.08 MM, DIE-4 ; Number of units in IC: 2.

LQN2AR10K04M01 : 1 ELEMENT, 0.1 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: ALUMINA ; Lead Style: J ; Application: General Purpose, RF Choke ; Inductance Range: 0.1000 microH ; Rated DC Current: 380 milliamps.

RJC07RB100K : RESISTOR, TRIMMER, CERMET, 13 TURN(S), 0.75 W, 10 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole ; Resistance Range: 10 ohms ; Tolerance: 10 +/- % ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.

TTC3A102F39D1EY : RESISTOR, TEMPERATURE DEPENDENT, NTC, 1 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 1 ohms ; Tolerance: 1 +/- % ; Power Rating: 0.1500 watts (2.01E-4 HP) ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Standards and Certifications:.

2N4075 : 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111. s: Polarity: NPN.

600HR033 : RESISTOR, CURRENT SENSE, METAL STRIP, 0.1 W, 3 %, 0.033 ohm, THROUGH HOLE MOUNT. s: Category / Application: Current Sensing, General Use ; Technology / Construction: METAL STRIP ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 0.0330 ohms ; Tolerance: 3 +/- % ; Power Rating: 0.1000 watts (1.34E-4 HP) ; Operating Temperature:.

 
0-C     D-L     M-R     S-Z