|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01117XP1117 datasheet
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP01118 Marking = om ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 0.51 ;; R2(Tr2)(kW|
|XP01119 Marking = 7P ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 1 ;; R2(Tr2)(kW|
|XP0111F Marking = 7O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0111H Marking = 9X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0111M Marking = ek ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP01210 Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01211 Marking = 9T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01215 Marking = 9M ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
2SC4793DS : Amplifier. Transistor, Silicon NPN Epitaxial Planar Type. Transistor Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications High Transistion: = 100MHz Complementary to 2SA1837 Absolute Maximum Ratings (Ta = 25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range.
2SD1894 : Audio. VCEO(V) = 140 ;; IC(A) = 7 ;; HFE(min) = 2000 ;; Package = TOP-3F-A1TOP-3F-B1.
2SJ506 : for General Switching. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
FQP4N20L : 200V N-channel Logic Level QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well.
IRG4PH50KD : High Voltage 1200 Volts . INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE High short circuit rating optimized for motor control, tsc =10µs, VCC = 125°C, VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery.
STGB3NB60MD : N-channel 600V 3A TO-220/D2PAK Powermesh Igbt. HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs,.
PBSS5330PA : 30 V, 3 A PNP Low VCEsat (BISS) Transistor PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA..
0603-9N5G : 1 ELEMENT, 0.0095 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.0095 microH ; Inductance Tolerance: 2 (+/- %) ; DCR: 0.1300 ohms ; Rated DC Current: 700 milliamps.
DMC26403 : 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: ROHS COMPLIANT, MINI6-G4-B, 6 PIN.
P3502SBL : 30 A, SILICON SURGE PROTECTOR, DO-214AA. s: Thyristor Type: Thyristor Surge Suppressor, SILICON SURGE PROTECTOR ; Package Type: DO-214AA, 2 PIN ; Pin Count: 2 ; Standards and Certifications: RoHS.
X-CLA : RESISTOR, NETWORK, FILM, ISOLATED, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Temperature Coefficient: 5 Â±ppm/Â°C ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 175 C (-67 to 347 F).
2-AW : RESISTOR, POTENTIOMETER, WIRE WOUND, 1 TURN(S), 5 W, 1 ohm - 25000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Technology / Construction: Wirewound ; Mounting / Packaging: Panel Mount (Bushing) ; Operating Temperature: 25 C (77 F).
224STR050J : CAPACITOR, FILM/FOIL, POLYESTER, 50 V, 0.22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; RoHS Compliant: Yes ; Capacitance Range: 0.2200 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Through.
238164043151 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 150 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 150 ohms ; Tolerance: 5 +/- % ; Power Rating: 0.5000 watts (6.70E-4 HP) ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards and Certifications:.
25NA220MCA10X12.5 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, NON-POLARIZED, 25 V, 220 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; Capacitance Range: 220 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 25 volts ; Leakage Current: 165 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40.
2N7002G-AE2-R : 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 7.5 ohms ; PD: 200 milliwatts ; Package Type: HALOGEN FREE PACKAGE-3 ; Number of units in IC: 1.