|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01119XP1119 datasheet
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP0111F Marking = 7O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0111H Marking = 9X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0111M Marking = ek ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP01210 Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01211 Marking = 9T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01215 Marking = 9M ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01216 Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01217 Marking = 9P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
2SC3890 : Silicon NPN Triple Diffused Planar Transistor. Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions 10typ 50typ Collector-Emitter.
2SC5012 : High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor 4 Pins Super Mini Mold.
APT50GF60AR : . The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Low Tail Current Avalanche Rated Hermetic Package High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated.
H2N6718V : 1A NPN Epitaxial Planar Transistor For General Purpose Medium Power Amplifier And Switching.
SD1474 : Amplifier. RF NPN Transistor.
STRH80P6FSY3 : P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET.
NTD4910N : Power MOSFET, Single 30V, 37A N Channel, DPAK/IPAK Power MOSFET, 30 V, 37 A, Single N Channel, DPAK/IPAK.
05002330BGMC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface.
0805X5R106KTAAT : CAP,CERAMIC,10UF,10VDC,10% -TOL,10% +TOL,X5R TC CODE,-15,15% TC,0805 CASE. s: Dielectric: Ceramic Composition.
P16NM101MAB15 : RES,TAPPED,CERMET,100 OHMS,10WVDC,20% +/-TOL,-150,150PPM TC. s: Potentiometer Type: Standard Potentiometer.
T9030T : DATACOM TRANSFORMER FOR ISDN APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).
YC324 : RESISTOR, NETWORK, FILM, ISOLATED; JUMPER, 0.125 W, SURFACE MOUNT, 1220. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Operating DC Voltage: 200 volts ; Operating Temperature: -55 to 155 C (-67 to 311 F).
1206G104J250ST : CAPACITOR, CERAMIC, MULTILAYER, 25 V, C0G, 0.1 uF, SURFACE MOUNT, 1206. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface Mount Technology ; EIA Case.
395KN-0369AQ : 1 ELEMENT, 110 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: Gull ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 110 microH.
44002SB : INVERTER TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Inverter Transformer ; Mounting: Chip Transformer.
87015 : POWER TRANSFORMER, 50 VA. s: Category: Power ; Other Transformer Types / Applications: STANDARD ; Mounting: Chip Transformer ; Power Rating (VA): 50 VA.