|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP0111FXP111F datasheet
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP0111H Marking = 9X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0111M Marking = ek ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP01210 Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01211 Marking = 9T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01215 Marking = 9M ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01216 Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01217 Marking = 9P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0121E Marking = aq ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP0121M Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
APT5010JFLL : 500V, 44A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
APT6017LFLL : 600V, 35A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
ATF-44101 : 2-8 GHZ Medium Power Gallium Arsenide Fet. 8 GHz Medium Power Gallium Arsenide FET Technical Data High Output Power: 32.0 dBm Typical at 4 GHz High Gain 1 dB Compression: 8.5 dB Typical at 4 GHz High Power Efficiency: 35% Typical at 4 GHz Hermetic Metal-Ceramic Stripline Package range. This nominally.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects.
BF569 : Amplifier. PNP Silicon RF Transistor. Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 25 °C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA For detailed information see chapter Package Outlines. Package mounted on alumina × 0.7 mm. Electrical.
BFT44 : Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 300V ;; IC(cont) = 0.5A ;; HFE(min) = - ;; HFE(max) = - ;; @ Vce/ic = 10V / 10mA ;; FT = 60MHz ;; PD = 5W.
BUY70C : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 250V ;; IC(cont) = 10A ;; HFE(min) = 15 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1A ;; FT = - ;; PD = 75W.
CDLL914 : Signal or Computer Diode. Signal or Computer Diode, Package : DO-213AA.
DSEC240-04A : Hiperfred TM Epitaxiadiode With Soft Recovery. Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions = 115°C; rectangular, = 0.5 TVJ ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS 1.5 VR typ.; = 10 kHz; repetitive International standard package miniBLOC Epoxy meets 94V-0 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses.
SD1100CL : Standard Recovery Diodes. Wide current range High voltage ratings to 3200V High surge current capabilities Diffused junction Hockey Puk version Case style DO-200AB (B-PUK) Typical Applications Converters Power supplies Machine tool controls High power drives Medium traction applications VRSM , maximum nonrepetitive peak rev. voltage V IF(AV) Max. average forward current @ Heatsink.
SMA5818SS13 : Surface Mount Schottky Barrier Rectifier ( Voltage Range - 20 to 80 Volts Current - 1.0 Ampere ).
UTCPN2222A : . *This device is for use as a medium power amplifier and switch requiring collector currents to 500mA. Sourced from Process 19. ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) Collector-base voltage VCBO 75 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current 1 A Collector dissipation mW °C Junction Temperature.
VHB50-28S : . The ASI VHB50-28S is Designed for Class 28 V High Band Applications to 175 MHz. Common Emitter 50 W/175 MHz OmnigoldTM Metalization System IC VCBO VCEO VEBO PDISS TJ TSTG °C 2.3 °C/W .
CC10TBK : JUMPER, 0 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), MELF, ROHS COMPLIANT ; Resistance Range: 0.0 ohms ; Operating Temperature: -55 to 155 C (-67 to 311 F).
DRA2115G : SMALL SIGNAL TRANSISTOR. s: Package Type: HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN.
STB200N6F3TRL : 120 A, 60 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0035 ohms ; Package Type: TO-263, ROHS COMPLIANT, TO-263, D2PAK-3 ; Number of units in IC: 1.
VD9233-B : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Frequency: 6500 to 2.55E8 Hz ; Operating Temperature: -40 to 85 C (-40 to 185 F).
X19 : CAPACITOR, CERAMIC, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -25 to 85 C (-13 to 185 F).
110MA100A1 : RES,TAPPED,WIREWOUND,10 OHMS,10% +/-TOL. s: Category / Application: General Use ; Technology / Construction: Wirewound.
1812B473K201CWM-HB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, X7R, 0.047 uF, SURFACE MOUNT, 1812. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.0470 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 200 volts ; Mounting Style:.
933083501215 : 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC, SMD, SST, 3 PIN.