|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01211XP1211 datasheet
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP01212 Marking = 9K ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01215 Marking = 9M ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01216 Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01217 Marking = 9P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0121E Marking = aq ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP0121M Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0121N Marking = HN ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01401 Marking = 5V ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01501 Marking = 5R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01504 Marking = 5S ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.3 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
LNJ306G5TR02 : Chip LEDs Brightness = High Brightness ;; Type 1 = S-gw ;; Type 2 = Gaalas ;; Outline (mm) = 2.9×1.25 ;; Lighting Color = High Bright Red ;; Remarks = ;; Package =
EEUFC0J391B : Aluminum Electrolytic Capacitors/fc
P-150SCSF7 : Battery Pack Battery Product; BATTERY NICAD PACK 8.4V 1500MAH Specifications: Battery Cell Size: SC ; Number of Cells: 7 ; Voltage - Rated: 8.4V ; Capacity: 1.5Ah @ 300mA ; Structure: Side to Side, 1 Row x 7 Cells ; Rechargeability: Yes ; Termination Style: Solder Tab ; Battery Chemistry: Nickel Cadmium ; Weight: 0.681 lb (308.9g) ; Lead Free Status: Lead Free
CX-413-P : PHOTOELECTRIC SENSOR, 0M TO 30M, PNP Specifications: No. of Channels: - ; Peak Wavelength: - ; Forward Current If(AV): - ; Sensing Range: 0m to 30m ; Output Current: 100mA ; Optocoupler Output Type: - ; Sensor Output: PNP ; Input Current: - ; Output Voltage: - ; Supply Voltage Range DC: 12V to 24V ; Viewing Angle: - ; Opto Case Style:
ECW-F6333JL : 0.033µF Film Capacitor Radial; CAP FILM 0.033UF 630VDC RADIAL Specifications: Capacitance: 0.033µF ; Tolerance: ±5% ; Dielectric Material: Polypropylene, Metallized ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.394" (10.00mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: High Frequency and High Stability ; Lea
ECQ-V1H393JLW : 0.039µF Film Capacitor Radial; CAP FILM 0.039UF 50VDC RADIAL Specifications: Capacitance: 0.039µF ; Tolerance: ±5% ; Dielectric Material: Polyester, Metallized - Stacked ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.197" (5.00mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: General Purpose ; Lead Free Status
ERJ-6GEYJ161V : 160 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES 160 OHM 1/8W 5% 0805 SMD Specifications: Resistance (Ohms): 160 ; Power (Watts): 0.125W, 1/8W ; Tolerance: ±5% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: ±200ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERJ-1GEF8253C : 825K Ohm 0.05W, 1/20W Chip Resistor - Surface Mount; RES 825K OHM 1/20W 1% 0201 SMD Specifications: Resistance (Ohms): 825K ; Power (Watts): 0.05W, 1/20W ; Tolerance: ±1% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: ±200ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
EXB-V8V473JV : Resistor 47K Ohm 62.5mW 4 Resistors[number of pins] Pin Networks, Arrays; RES ARRAY 47K OHM 4 RES 1206 Specifications: Resistance (Ohms): 47K ; Tolerance: ±5% ; Power Per Element: 62.5mW ; Circuit Type: Isolated ; Number of Pins: 8 ; Packaging: Cut Tape (CT) ; Number of Resistors: 4 ; Package / Case: 1206 (3216 Metric), Concave ; Mounting Type: Surface Mount ; Temperature Coefficient: ±200ppm/°C ; Le
ERJ-1GEF5231C : 5.23K Ohm 0.05W, 1/20W Chip Resistor - Surface Mount; RES 5.23K OHM 1/20W 1% 0201 SMD Specifications: Resistance (Ohms): 5.23K ; Power (Watts): 0.05W, 1/20W ; Tolerance: ±1% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: ±200ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
2SC3931GCL : Rf Transistor (bjt) Discrete Semiconductor Product 15mA 20V 150mW NPN; TRANS NPN 20VCEO 15MA S-MINI 3P Specifications: Frequency - Transition: 650MHz ; Noise Figure (dB Typ @ f): 3.3dB @ 100MHz ; Current - Collector (Ic) (Max): 15mA ; DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V ; Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 20V ; Gain: 24dB ; Power - Max: 150mW ; Lead F
2SD1009TX : 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR Specifications: Polarity: NPN
2SD847 : . TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH SPEED SWITCHING High collector current Excellent safe operating area Applications Audio amp Series regulators General purpose power amplifiers (Complementary to 2SB757) Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base.
CPH5801 : . MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that short reverse recovery time and low forward voltage.
DTC123JE : . ! 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only.
SDF9N100 : VDS (V) = ;; Id Continuous Tc=25C (A) = 9 ;; Idm Pulsed (A) = 36 ;; RDS (On) (Ohms) = 1.4 ;; PD Max = 300 ;; Page No. = A50 ;; Package Options = Gaf ;; Outline Number Section Z = 14.
SR3010 : Package Type : DO-201AD, if : 3.0A, VRM : 100V. Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability Operating Temperature: to +125°C Storage Temperature: to +150°C Maximum Thermal Resistance; 30 °C/W Junction To Ambient Device Marking Maximum Recurrent Peak Reverse Voltage 80V 100V Maximum RMS Voltage Maximum DC Blocking Voltage 80V 100V Average Forward.
XR-85 : Silicon Epitaxial Planar Switching Diode. Small glass structure ensures high reliability Low leakage High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Glass,hermetically sealed Polarity: Color band denotes cathode Mounting position: Any (Ratings at 25oC ambient temperature unless otherwise.
SiHU3N50D : Next-Generation 400 V, 500 V, And 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down To 0.130 Î©, FOM Down To 7.65 Î©-nC, And Currents From 3 A To 36 A Next-Generation 400 V, 500 V, and 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down to 0.130 Î©, FOM Down to 7.65 Î©-nC, and Currents From.
03028BR472BMU : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BR, 0.0047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0047 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.
0604HQ-10NJXB : 1 ELEMENT, 0.0104 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Air ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.0104 microH ; Inductance Tolerance: 5 (+/- %) ; DCR: 0.0370 ohms ; Rated DC Current: 1500 milliamps.
MSC81090 : L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: 0.230 INCH, HERMETIC SEALED, STUD PACKAGE-4 ; Number of units in IC: 1.
PM105-120M-RC : 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Application: General Purpose, Power Choke ; Inductance Range: 12 microH ; Rated DC Current: 2450 milliamps ; Operating Temperature: -40 to 125 C (-40 to 257 F).
RKZ10BKV : 10 V, 0.7 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.
SI1414DH-T1-GE3 : 4000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0460 ohms ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN ; Number of units in IC: 1.
STPS30H100CTN : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.
T2160N2200 : 4600 A, 2200 V, SCR. s: VDRM: 2200 volts ; VRRM: 2200 volts ; IT(RMS): 4600 amps ; IGT: 300 mA ; Pin Count: 4.