|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01212XP1212 datasheet
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP01213 Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP01214 Marking = 9H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01215 Marking = 9M ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP01216 Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01217 Marking = 9P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0121E Marking = aq ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP0121M Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0121N Marking = HN ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01401 Marking = 5V ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01501 Marking = 5R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01504 Marking = 5S ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.3 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01507 Marking = 4O ;; VCEO(V) = 150 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.05 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
1N47828A-1N4764A : Silicon 1w Zener Diodes (plastic).
2SC4242 : High Voltage, High Speed Switching Power Transistor (400V, 7A). TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage.
BTA208X-600B : Three Quadrant Triacs High Commutation. Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in motor control circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA208XRepetitive.
CV7638-O : Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 60V ;; IC(cont) = 0.15A ;; HFE(min) = 80 ;; HFE(max) = 120 ;; @ Vce/ic = 0.6V / 1mA ;; FT = - ;; PD = 0.35W.
03028-BX151AJZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.00015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.50E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
AG4801CI : DATACOM TRANSFORMER FOR 10/100/1000 BASE-T APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.
B340LA-7 : 3 A, 40 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: PLASTIC, SMA, 2 PIN ; Number of Diodes: 1 ; VRRM: 40 volts ; IF: 3000 mA.
BLF6G22-180P : S BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: SOT-539A, 5 PIN ; Number of units in IC: 1.
DRA2115G : SMALL SIGNAL TRANSISTOR. s: Package Type: HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN.
F930E336KAA : CAPACITOR, TANTALUM, SOLID, POLARIZED, 2.5 V, 33 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Tantalum ; : Polarized ; Capacitance Range: 33 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 2.5 volts ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 85 C (-67.
MAPLST2122-002PP : S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: PFP-16 ; Number of units in IC: 1.
RD0301007KVP1500PF+-10%R85 : CAP,CERAMIC,1.5NF,7KVDC,10% -TOL,10% +TOL,N750 TC CODE,-750PPM TC. s: Dielectric: Ceramic Composition.
SKS110FB6U74V16 : 3 PHASE, 110 A, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; Pin Count: 5 ; Number of Diodes: 6.
ZC0J107M6L005VR : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 100 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 6.3 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature:.
1812A1K00100FCT : CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.00001 uF, SURFACE MOUNT, 1812. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 1000 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface Mount Technology.