|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01215XP1215 datasheet
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance * Ratio between 2 elements
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)* VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP01216 Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01217 Marking = 9P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0121E Marking = aq ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP0121M Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP0121N Marking = HN ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP01401 Marking = 5V ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01501 Marking = 5R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01504 Marking = 5S ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.3 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01507 Marking = 4O ;; VCEO(V) = 150 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.05 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01531 Marking = 9F ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.05 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01554 Marking = eu ;; VCEO(V) = 40 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP01601 Marking = 7S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP01878 Marking = al ;; VCEO(V) = VDSS50 ;; VCEO(Tr2)(V) = ;; IC(A) = ID0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.125 ;; R1(kW ) = ;; R2(Tr2)(kW|
BAS41 : Schottky Barrier Single And Dual Diode.
CM600DU-24F : Type = Igbt Module ;; Voltage = 1200V ;; Current = 600A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves =.
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ADA130R : 0.4 A, 20 ELEMENT, SILICON, SIGNAL DIODE. s: Diode Type: General Purpose ; IF: 400 mA ; Package: PLASTIC, SOIC-14 ; Pin Count: 14 ; Number of Diodes: 20.
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NDC7001CD84Z : 510 mA, 50 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 50 volts ; rDS(on): 2 ohms ; Package Type: SUPERSOT-6 ; Number of units in IC: 2.
RC0608-100K : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose ; Inductance Range: 10 microH.
SP110RF : RESISTOR, WIRE WOUND, 0.75 W, 1 %, 50 ppm, 10 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 10 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 50 Â±ppm/Â°C ; Power Rating: 0.7500 watts (0.0010.
TAS334J035P1A : CAP,TANTALUM / TA2O5,330NF,35VDC,5% -TOL,5% +TOL.
1812Y4K0182FXR : CAPACITOR, CERAMIC, MULTILAYER, 4000 V, X7R, 0.0018 uF, SURFACE MOUNT, 1812. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.0018 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 4000 volts ; Mounting.
225CKR050MPX : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 2.2 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 2.2 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Leakage Current: 3.3 microamps ; ESR: 75357 milliohms ; Mounting Style: Through Hole ; Operating.
2N4863.MOD : 2 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-205AD. s: Polarity: NPN ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.
84050 : POWER TRANSFORMER. s: Category: Power ; Other Transformer Types / Applications: STANDARD ; Mounting: Chip Transformer ; Operating Temperature: -55 to 130 C (-67 to 266 F).