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Details, datasheet, quote on part number:XP01215XP1215
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Datasheet text preview:
Composite Transistors
XP01215 (XP1215)
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
(0.425)
0.20±0.05 5 4
0 05 0.12+0..02
1.25±0.10 2.1±0.1
G
G
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
10°
1
2
3
(0.65) (0.65) 1.3±0.1 2.0±0.1
0.9±0.1
G
UNR1215(UN1215) × 2 elements
I Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings 50 50 100 150 150 55 to +150 Unit V V mA mW °C °C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC88A SMini5-G1 Package
Marking Symbol: 9M Internal Connection
1 2 3 4 Tr1 5
Tr2
I Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance * Ratio between 2 elements
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)* VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = 2mA, f = 200MHz 30% 150 10 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.01 460 typ max Unit V V µA µA mA
Note) The Part number in the Parenthesis shows conventional part number.
0 to 0.1
02 0.9+0..1
I Basic Part Number of Element
5°
0.2±0.1
I
Features
1
Composite Transistors
PT -- Ta
250
XP01215
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC -- VCE
160 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
hFE -- IC
400 VCE=10V
140
30 10 3 1 0.3 0.1 0.03 0.01 0.1 25°C
Forward current transfer ratio hFE
IB=1.0mA 0.9mA 0.8mA
Ta=25°C
350 300 250 200 25°C 150 100 50 0 25°C Ta=75°C
Collector current IC (mA)
120 100 80
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA
Ta=75°C
25°C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
I O -- V IN
f=1MHz IE=0 Ta=25°C 10000 3000 VO=5V Ta=25°C 100 30
VIN -- IO
VO=0.2V Ta=25°C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
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