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Details, datasheet, quote on part number:XP01216
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| Part: | XP01216 |
| Category: | Discrete => Transistors => Composite Transistors |
| Description: | Marking = 9N ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini5-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download XP01216 datasheet File size : 83 kB |
| Request For quote: | Find where to buy XP01216
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Datasheet text preview:
Composite Transistors
XP01216 (XP1216)
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
0 05 0.12+0..02
For switching/digital circuits Features
· Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half
0.20±0.05 5 4
1.25±0.10 2.1±0.1
1
2
3
(0.65) (0.65) 1.3±0.1 2.0±0.1 10°
Basic Part Number
· UNR2216 (UN2216) × 2
0.9±0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating 50 50 100 150 150 -55 to +150 Unit V V mA mW °C °C
1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A
0 to 0.1
02 0.9+0..1
4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package
Marking Symbol: 9N Internal Connection
5 Tr1 4 Tr2
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE hF E ( S m a l l
/Large)
1
2
5°
3
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
Min 50 50
Typ
Max
0.1 0.5 0.01 160 0.50 0.99 0.25 4.9 0.2 - 30% 4.7 150 + 30% 460
V CE(sat) VO H VOL R1 fT
VCB = 10 V, IE = -2 mA, f = 200 MHz
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003 SJJ00141BED
0.2±0.1
Unit V V µA µA mA V V V k
1
XP01216
PT Ta
250
IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
Total power dissipation PT (mW)
200
Collector current IC (mA)
120
150
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
10
80
1
100
Ta = 75°C 0.1 25°C
40
50
0.1 mA
0 0 40 80 120 160
0 0 2 4 6 8 10 12
-25°C 0.01 0.1 1 10 100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
400 VCE = 10 V
6
Cob VCB
f = 1 MHz IE = 0 Ta = 25°C
I O VI N
104 VO = 5 V Ta = 25°C
Forward current transfer ratio hFE
Ta = 75°C 300 25°C -25°C 200
5
4
3
Output current IO (µA)
1 10 100
103
102
2
100
10
1
0
1
10
100
1 000
0 0.1
1 0.4
0.6
0.8
1.0
1.2
1.4
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
100 VO = 0.2 V Ta = 25°C
Input voltage VIN (V)
10
1
0.1
0.01 0.1
1
10
100
Output current IO (mA)
2
SJJ00141BED
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