Details, datasheet, quote on part number: XP01217
PartXP01217
CategoryDiscrete => Transistors => Composite Transistors
TitleComposite Transistors
DescriptionMarking = 9P ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 22 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini5-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload XP01217 datasheet
  

 

Features, Applications

Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +150 Unit mW °C

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number.


Collector output capacitance C (pF) (Common base, input open circuited) ob

Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.


 

Related products with the same datasheet
XP1217
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
XP01217XP1217
XP0121E Marking = aq ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP0121M Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW
XP0121N Marking = HN ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW
XP01401 Marking = 5V ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP01401XP1401
XP01501 Marking = 5R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP01501XP1501
XP01504 Marking = 5S ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.3 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP01504XP1504
XP01507 Marking = 4O ;; VCEO(V) = 150 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.05 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP01507XP1507
XP01531 Marking = 9F ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.05 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP01554 Marking = eu ;; VCEO(V) = 40 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP01554XP1554
XP01601 Marking = 7S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP01601XP1601
XP01878 Marking = al ;; VCEO(V) = VDSS50 ;; VCEO(Tr2)(V) = ;; IC(A) = ID0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.125 ;; R1(kW ) = ;; R2(Tr2)(kW
XP02210 Marking = 9Q ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP02210XP2210
XP02211 Marking = 9O ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
Same catergory

1N5615 : Fast Rectifier (100-500ns), Package : a.

1PMT7.0A : Zener Transient Voltage Suppressor POWERMITE® Package. 1PMT5.0AT1/T3 Series Zener Transient Voltage Suppressor POWERMITE® Package The 1PMT5.0AT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient.

2SC4493 : NPN Triple Diffused Planar Silicon Transistor, High-voltage Amp, High-voltage Switching Application.

BU2507DX : BU2507DX; Silicon Diffused Power Transistor;; Package: SOT399 (TOP-3D).

DD89N : SCR/ Diode Modules.

FQB13N10 : 100V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices.

G32A-C : G32A-C Voltage Detection Unit Data Sheet. Connects to a maximum of two G3PA-VD Relays. Prevents malfunction of the G3PA-VD due to residual voltage, leakage current, or input noise. Name Voltage Detection Unit 12/24 VDC Rated input voltage G32A-C Model Note: Contact Omron for details of applicable standards. The G32A-C can be used to prevent malfunction due to residual voltage, leakage current,.

KSB834 : PNP Epitaxial Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value Units °C Symbol ICBO IEBO BVCEO hFE1 hFE2.

SN74S1051 : 12-bit Schottky Barrier Diode Bus-termination Array. Designed to Reduce Reflection Noise Repetitive Peak Forward Current mA 12-Bit Array Structure Suited for Bus-Oriented Systems This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device consists a 12-bit high-speed Schottky diode array suitable for clamping to VCC and/or GND. ORDERING INFORMATION.

T3101N : SCR / Diode Presspacks. Volle Sperrfähigkeit bei 125° mit 50 Hz Hohe Stoßströme und niedriger Wärmewidererstände durch NTV-Verbindung zwischen Silizium und Mo-Trägerscheibe. Elektroaktive Passivierung durch a - C:H Full blocking capability at 125°C with 50 Hz High surge currents and low thermal resistance by using low temperature-connection NTV between silicon wafer and molybdenum.

PSMN5R5-60YS : N-channel LFPAK 60 V, 5.5 M? Standard Level FET Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment..

03028BX152AMU : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BX, 0.0015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0015 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

ACM4532-102-2P-T : FERRITE CHIP.

BLY50.MOD : 3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-213AA. s: Polarity: NPN ; Package Type: HERMETIC SEALED, METAL, TO-66, 2 PIN.

CDLL5918B : 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB. s: Diode Type: VOLTAGE REGULATOR DIODE.

MPK02N6 : 1 A, 600 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 7.5 ohms ; Number of units in IC: 1.

MPND-4005-B15 : 100 V, SILICON, PIN DIODE. s: Number of Diodes: 1 ; PD: 250 milliwatts ; RoHS Compliant: RoHS.

SHD419203 : 4 A, 80 V, PNP, Si, POWER TRANSISTOR. s: Polarity: PNP ; Package Type: HERMETIC SEALED, CERAMIC, LCC-3.

TCJT686M004A0080 : CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 4 V, 68 uF, SURFACE MOUNT, 3528LM. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 68 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 4 volts ; Leakage Current: 27.2 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 3528LM.

 
0-C     D-L     M-R     S-Z