|Category||Discrete => Transistors => Composite Transistors|
|Description||Marking = al ;; V<SUB>CEO</SUB>(V) = VDSS50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = ID0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini5-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP01878 datasheet
|Cross ref.||Similar parts: SSM5N15FU|
Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half
Parameter Rating of element Drain to source voltage Gate to source voltage Drain current Max drain current Total Allowable power dissipation Channel temperature Storage temperature
Parameter Drain to source voltage Drain cut-off current Gate cut-off current Gate threshold voltage Drain on-state resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff VDD 3 V, VGS = 470 VDD 3 V, VGS = 470 Conditions = 10 µA, VGS = 0 VDS 50 V, VGS = 0 VGS ±7 V, VDS = 1 µA, VDS = 10 mA, VGS = 10 mA, VGS 4.0 V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time * Turn-off timeNote) Refer to ton , toff test circuit (next page)
ton , toff Test circuit Vout 470 Vin VDD 3 V Vout 10% 90% ton toff
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP02210 Marking = 9Q ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP02211 Marking = 9O ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP02215 Marking = 9R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP02401 Marking = 7R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP02501 Marking = 5W ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP03311 Marking = du ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03312 Marking = 4P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP03316 Marking = am ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP03383 Marking = DV ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03389 Marking = DX ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03390 Marking = ex ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03391 Composite Device - Composite Transistors|
|XP04111 Marking = 9U ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04112 Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
2N3012 : Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 12V ;; IC(cont) = 0.2A ;; HFE(min) = 30 ;; HFE(max) = 120 ;; @ Vce/ic = 0.5V / 30mA ;; FT = 400MHz ;; PD = 0.36W.
2SK3674-01L : High voltage. High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt.
5SDF07F4501 : . Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTO converters with high DC link voltages Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating VRRM IRRM VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage.
BUZ907DP : P-Channel. Breakdown Voltage = 220V, ID= 16A, PD= 250WPackage Type : TO3P.
BZX55100 : Silicon Planar Zener Diodes. Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. DIM ENSIONS DIM inches Min. 1.083 Max. 0.075 0.020 Min. 27.50 mm Max. 1.9 0.52 Note Zener current see Table "Characteristics" Power dissipation at Tamb=25 Junction temperature Storage.
FQA170N06 : 60V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.
NTE454 : MOSFET, N-Ch, Dual Gate, TV Unf/rf Amp, Gate Protected.. MOSFET, NCh, Dual Gate, TV UHF/RF Amp, Gate Protected : The is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. : D Low Reverse Transfer Capacitance Crss = 0.03pf (Max) D High Forward Transfer Admittance |yfe| = 020 mmhos D Diode Protected Gates Drain Source Voltage, VDSX. 20Vdc DrainGate Voltage,.
TD62001Series : 7ch Darlington Sink Driver.
05002-150KFZ : CAP,CERAMIC,15PF,250VDC,1% -TOL,1% +TOL,C0G TC CODE,-30,30PPM TC,0603 CASE. s: Dielectric: Ceramic Composition.
05002-620AKZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000062 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 6.20E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/Ā°C ; Mounting Style: Surface Mount Technology.
KSC2073J69Z : 1.5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.
LSLH11JL01 : 1 ELEMENT, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, FILTER CHOKE ; Operating Temperature: -25 to 85 C (-13 to 185 F).
MSS30,CR46-E45 : SILICON, MIXER DIODE. s: Diode Type: MIXER DIODE ; Diode Applications: Mixer ; RoHS Compliant: RoHS ; Package: CERAMIC, CASE E45, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.
SMF05C.TGT : 100 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE. s: Arrangement: Common Anode ; Diode Type: Transient Voltage Suppressor Diodes ; VBR: 6 volts ; RoHS Compliant: RoHS ; Package: PLASTIC, SC-70, 6 PIN ; Pin Count: 6 ; Number of Diodes: 5.