Details, datasheet, quote on part number: XP02210
PartXP02210
CategoryDiscrete => Transistors => Composite Transistors
TitleComposite Transistors
DescriptionMarking = 9Q ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini5-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload XP02210 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Two elements incorporated into one package (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +150 Unit mW °C

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number.


Collector output capacitance C (pF) (Common base, input open circuited) ob

Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.


 

Related products with the same datasheet
XP2210
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
XP02210XP2210
XP02211 Marking = 9O ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP02211XP2211
XP02215 Marking = 9R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP02215XP2215
XP02401 Marking = 7R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP02401XP2401
XP02501 Marking = 5W ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP02501XP2501
XP03311 Marking = du ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP03312 Marking = 4P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW
XP03316 Marking = am ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW
XP03383 Marking = DV ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP03389 Marking = DX ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP03390 Marking = ex ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP03391 Composite Device - Composite Transistors
XP04111 Marking = 9U ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP04111XP4111
XP04112 Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW
XP04112XP4112
XP04113 Marking = 6S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
Same catergory

1N5401 : Pakage = DO-201AD ;; Max. Reverse Voltage VRM (V)= 100 ;; Max. Aver. Rect. Current io (A)= 3 ;; Ifsm (A)= 200.

2SD1791 : . Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Dielectric Strength Mounting Torque Electrical Characteristics (Tc=25 ) Item Symbol I CBO Collector Cutoff Current I CEO I EBO Emitter.

2SK3067 : VDDS = 600 ;; Id = 2 ;; Package Type = TO-220NIS.

56DN06 : SCR / Diode Presspacks. Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert RMS forward current Dauergrenzstrom mean forward current Stoßstrom-Grenzwert surge forward current Grenzlastintegral I²t-value Charakteristische Werte.

BAV16W : Small Signal Switching Diodes.

BUL44 : Power 2A 400V NPN , Package: TO-220, Pins=3. NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44 have an applications specific state­of­the­art die designed for use 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following: High and Flat DC Current Gain hFE Fast Switching No Coil Required.

FPBL15SM60 : 15A, Smart Power Module (SPM). is an advanced smart power module (SPM) that Fairchild has newly developed and designed to provide very compact and low cost, yet high performance ac motor drives mainly targeting medium speed low-power inverterdriven application like air conditioners. It combines optimized circuit protection and drive matched to low-loss IGBTs. Highly effective short-circuit.

KTX511T : = General Purpose Transistor ;; Package = TS6.

06035A2R2K4T4A : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0000022 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.20E-6 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

IRFM350-JQR-B : 14 A, 400 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 0.4150 ohms ; Number of units in IC: 1.

MKS2A051001M00JASD : CAPACITOR, METALLIZED FILM, POLYESTER, 16 V, 10 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; RoHS Compliant: Yes ; Capacitance Range: 10 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 16 volts ; Mounting Style: Through.

MLL5535B-1 : 15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA. s: Diode Type: VOLTAGE REGULATOR DIODE.

RB051M-2Y : 3 A, 20 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: PMDU, 2 PIN ; Number of Diodes: 1 ; VRRM: 20 volts ; IF: 3000 mA ; RoHS Compliant: RoHS.

S1006D : 6 A, 100 V, SCR, TO-252AA. s: VDRM: 100 volts ; VRRM: 100 volts ; IT(RMS): 6 amps ; IGT: 15 mA ; Standards and Certifications: RoHS ; Package Type: DPAK, DPAK-3 ; Pin Count: 2.

SMG3401-C : POWER, FET. The SMG3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SMG3401 is universally used for all commercial-industrial applications. * Small Package Outline * Lower Gate Charge * RoHS Compliant Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current.

SSE110N03-03P : POWER, FET. Elektronische Bauelemente 30V , RDS(ON) 2.5m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of "-C" specifies halogen and lead-free These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Low RDS(on) Provides Higher Efficiency and Extends.

SV5623U : 1 A, SILICON, SIGNAL DIODE. s: Package: MELF-1, 2 PIN ; Number of Diodes: 1 ; IF: 1000 mA.

40435R : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 80 C (-40 to 176 F).

74479142 : 1 ELEMENT, 1.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 1.2 microH ; Rated DC Current: 100 milliamps ; Operating Temperature:.

 
0-C     D-L     M-R     S-Z