|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP02211XP2211 datasheet
Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP02215 Marking = 9R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP02401 Marking = 7R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP02501 Marking = 5W ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP03311 Marking = du ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03312 Marking = 4P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP03316 Marking = am ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP03383 Marking = DV ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03389 Marking = DX ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03390 Marking = ex ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03391 Composite Device - Composite Transistors|
|XP04111 Marking = 9U ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04112 Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP04113 Marking = 6S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04114 Marking = BK ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
15CLJQ045 : 5 to 100 Amp. Schottky Rectifier: 15 Amp, 45v High Efficiency Series. Major Ratings and Characteristics IF(AV) VRRM (Per Leg) IFSM = 8.3ms half-sine (Per Leg) TJ =125°C (Per Leg) 15CLJQ045 Units A V / The 15CLJQ150 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward.
2SA1492 : . Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) sAbsolute maximum ratings Symbol VCBO VCEO VEBO PC Tj Tstg +150 (Ta=25°C) Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=10V, f=1MHz .
APT20M20JFLL : . Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
BFR96T : Silicon NPN Planar RF Transistor. Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. D High power gain D Low noise figure D High transition frequency BFR96T Marking: BFR96T Plastic case (TO 1 = Collector, 2 = Emitter, 3 = Base Tamb = 25_C, unless otherwise specified Parameter Collector-base.
HGTD2N120BNS : 12A, 1200V, NPT Series N-channel Igbt. The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal.
KTC3541T : = Low Vce(sat) Transistor ;; Package = TSM.
MMBTA05 : MMBTA05 - NPN General Purpose Amplifier. This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 1 Emitter 2. Base 3. Collector SOT-23 1 Mark: 1H 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage.
UGB8AT : Ultrafast Efficient Plastic Rectifier. Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode Ultrafast reverse recovery time for high efficiency Soft recovery characteristics Excellent high temperature switching Glass passivated chip junction High temperature.
XN04609XN4609 : . Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total.
SPV1001T40 : Schottky Barrier Diodes Cool bypass switch for photovoltaic application.
03028BR391AKU : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 3.90E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
FP-5330 : 1 MHz - 100 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -54 to 100 C (-65 to 212 F).
HA55-2223070LF : 1 ELEMENT, 7 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Application: General Purpose, Power Choke ; Inductance Range: 7 microH ; Rated DC Current: 40000 milliamps ; Operating Temperature: -40 to 85 C (-40 to 185 F).
LR1206-R047FW : RES,SMT,THICK FILM,47M OHMS,1% +/-TOL,1206 CASE. s: Category / Application: General Use.
MCH6436 : 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0340 ohms ; Package Type: MCPH6, 6 PIN ; Number of units in IC: 1.
MF1/2S-100FI : RESISTOR, METAL FILM, 0.5 W, 1 %, 150 ppm, 100 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 100 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 150 Â±ppm/Â°C ; Power Rating: 0.5000 watts (6.70E-4 HP) ; Operating.
2N7091-QR-B : 14 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2000 ohms ; Package Type: TO-220, HERMETIC SEALED, METAL, TO-220, 3 PIN ; Number of units in IC: 1.
30444-LF1 : SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER.
594D35X0025B2T : CAPACITOR, TANTALUM, SOLID, POLARIZED, 25 V, 3.3 uF, SURFACE MOUNT, 2824. s: Configuration / Form Factor: Chip Capacitor ; General : Polarized ; Capacitance Range: 3.3 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 25 volts ; Leakage Current: 0.8000 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 2824 ; Operating Temperature:.