|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP02211XP2211 datasheet
Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP02215 Marking = 9R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP02401 Marking = 7R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP02501 Marking = 5W ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP03311 Marking = du ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03312 Marking = 4P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP03316 Marking = am ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP03383 Marking = DV ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03389 Marking = DX ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03390 Marking = ex ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03391 Composite Device - Composite Transistors|
|XP04111 Marking = 9U ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04112 Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP04113 Marking = 6S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04114 Marking = BK ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
MAZ8330-M : Silicon Planar Type
FBA04A05LSA : Locked Rotor Protection Circuits Automatically Restarts in a few Seconds Reverse Voltage Protection
EEV-TG1J470P : 470µF Aluminum Capacitor Radial, Can - SMD 63V; CAP ALUM 470UF 63V 20% SMD Specifications: Capacitance: 470µF ; ESR (Equivalent Series Resistance): 180.0 mOhm ; Features: General Purpose ; Lifetime @ Temp.: 2000 Hrs @ 125°C ; Size / Dimension: 0.630" Dia (16.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.670" L x 0.670" W (17.00mm x 17.00mm) ; Mounting Type: Surface
ECW-H16272RHV : 2700pF Film Capacitor Radial; CAP FILM 2700PF 1.6KVDC RADIAL Specifications: Capacitance: 2700pF ; Tolerance: ±3% ; Dielectric Material: Polypropylene, Metallized ; Package / Case: Radial ; Packaging: Tape & Box (TB) ; Lead Spacing: 0.295" (7.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: High Frequency and High St
ELC-09D562F : Fixed Inductors, Coils, Choke 5.6mH 110mA Radial -; COIL CHOKE 5600UH RADIAL Specifications: Inductance: 5.6mH ; Tolerance: ±10% ; Package / Case: Radial ; Packaging: Bulk ; Type: - ; Current: 110mA ; Mounting Type: Through Hole ; Q @ Freq: - ; Frequency - Self Resonant: - ; DC Resistance (DCR): 12.6 Ohm ; Shielding: Unshielded ; Applications: General Purpose ; Lead Free Sta
ERJ-S06F1780V : 178 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES ANTI-SULFUR 178 OHM 1% 0805 Specifications: Resistance (Ohms): 178 ; Power (Watts): 0.125W, 1/8W ; Tolerance: ±1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: ±100ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERO-S2PHF2943 : 294K Ohm 0.25W, 1/4W Through Hole Resistors; RES 294K OHM METAL FILM 1/4W 1% Specifications: Resistance (Ohms): 294K ; Power (Watts): 0.25W, 1/4W ; Tolerance: ±1% ; Packaging: Tape & Box (TB) ; Composition: Metal Film ; Temperature Coefficient: ±50ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
UNR511N00L : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 100mA 50V 150mW PNP - Pre-Biased; TRANS PNP W/RES 80 HFE S-MINI 3P Specifications: Transistor Type: PNP - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 150mW ; Resistor - Base (R1) (Ohms): 4.7K ; Resistor - Emitter Base (R2) (Ohms): 47K ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA ; Curr
EXB2 : RESISTOR, NETWORK, FILM, ISOLATED; JUMPER, 0.25 W, SURFACE MOUNT, 0402 Specifications: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP ; Operating Temperature: -55 to 125 C (-67 to 257 F)
15CLJQ045 : 5 to 100 Amp. Schottky Rectifier: 15 Amp, 45v High Efficiency Series. Major Ratings and Characteristics IF(AV) VRRM (Per Leg) IFSM = 8.3ms half-sine (Per Leg) TJ =125°C (Per Leg) 15CLJQ045 Units A V / The 15CLJQ150 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward.
2SA1492 : . Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) sAbsolute maximum ratings Symbol VCBO VCEO VEBO PC Tj Tstg +150 (Ta=25°C) Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=10V, f=1MHz .
APT20M20JFLL : . Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
BFR96T : Silicon NPN Planar RF Transistor. Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. D High power gain D Low noise figure D High transition frequency BFR96T Marking: BFR96T Plastic case (TO 1 = Collector, 2 = Emitter, 3 = Base Tamb = 25_C, unless otherwise specified Parameter Collector-base.
HGTD2N120BNS : 12A, 1200V, NPT Series N-channel Igbt. The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal.
KTC3541T : = Low Vce(sat) Transistor ;; Package = TSM.
MMBTA05 : MMBTA05 - NPN General Purpose Amplifier. This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 1 Emitter 2. Base 3. Collector SOT-23 1 Mark: 1H 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage.
UGB8AT : Ultrafast Efficient Plastic Rectifier. Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode Ultrafast reverse recovery time for high efficiency Soft recovery characteristics Excellent high temperature switching Glass passivated chip junction High temperature.
XN04609XN4609 : . Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total.
SPV1001T40 : Schottky Barrier Diodes Cool bypass switch for photovoltaic application.
03028BR391AKU : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 3.90E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
FP-5330 : 1 MHz - 100 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -54 to 100 C (-65 to 212 F).
HA55-2223070LF : 1 ELEMENT, 7 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Application: General Purpose, Power Choke ; Inductance Range: 7 microH ; Rated DC Current: 40000 milliamps ; Operating Temperature: -40 to 85 C (-40 to 185 F).
LR1206-R047FW : RES,SMT,THICK FILM,47M OHMS,1% +/-TOL,1206 CASE. s: Category / Application: General Use.
MCH6436 : 6000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0340 ohms ; Package Type: MCPH6, 6 PIN ; Number of units in IC: 1.
MF1/2S-100FI : RESISTOR, METAL FILM, 0.5 W, 1 %, 150 ppm, 100 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 100 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 150 Â±ppm/Â°C ; Power Rating: 0.5000 watts (6.70E-4 HP) ; Operating.
2N7091-QR-B : 14 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2000 ohms ; Package Type: TO-220, HERMETIC SEALED, METAL, TO-220, 3 PIN ; Number of units in IC: 1.
30444-LF1 : SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER.
594D35X0025B2T : CAPACITOR, TANTALUM, SOLID, POLARIZED, 25 V, 3.3 uF, SURFACE MOUNT, 2824. s: Configuration / Form Factor: Chip Capacitor ; General : Polarized ; Capacitance Range: 3.3 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 25 volts ; Leakage Current: 0.8000 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 2824 ; Operating Temperature:.