|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP02215XP2215 datasheet
Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE = 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP02401 Marking = 7R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP02501 Marking = 5W ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP03311 Marking = du ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03312 Marking = 4P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP03316 Marking = am ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP03383 Marking = DV ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03389 Marking = DX ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP03390 Marking = ex ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP03391 Composite Device - Composite Transistors|
|XP04111 Marking = 9U ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04112 Marking = 6R ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP04113 Marking = 6S ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04114 Marking = BK ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04115 Marking = 6T ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
2SK1462 : N-channel MOS Silicon Fet, Very High-speed Switching Application. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance.
BUK92150-55A : BUK92150-55A; Trenchmos (tm) Logic Level Fet. N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Product availability: in SOT428 (D-PAK). TrenchMOSTM technology Q101 compliant 175 °C rated Logic level compatible. s Automotive and general purpose power switching: 12 V and 24 V loads x Motors, lamps and solenoids.
MBRA340 : 3A 40V Schottky Rectifier in Sma. Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical.
ZXMN15A27K : MOSFETs MOSFET Master Table N Channel ? 100V This MOSFET low on-state resistance, fast switching and high avalanche withstand capability, making it ideal for high efficiency power management applications..
BC817B : 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: DIE-2.
SC036H045A5B : 45 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: WAFER ; Number of Diodes: 1 ; VRRM: 45 volts.
SHD225401 : 20 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0350 ohms ; Package Type: HERMETIC SEALED, TO-254, 3 PIN ; Number of units in IC: 1.
TC1N5221A : 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.
THS1027RJ : RESISTOR, WIRE WOUND, 10 W, 5 %, 50 ppm, 27 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 27 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 50 Â±ppm/Â°C ; Power Rating: 10 watts (0.0134 HP) ; Standards and Certifications:.
256MABA04KJC : CAPACITOR, METALLIZED FILM, 350 V, 25 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 25 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 350 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -25 to 85 C (-13 to 185 F).
667MA-101N : 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: Gull ; Molded / Shielded: Shielded ; Application: General Purpose, FILTER CHOKE ; Inductance Range: 100 microH ; Rated DC Current: 32 milliamps.
83CNQ80A : 80 A, 80 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 80000 mA ; Package: D61-8, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.
933665130235 : 50 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: PLASTIC, SST3, SMD, 3 PIN.
934056546135 : 30 V, SILICON, PIN DIODE. s: Package: PLASTIC, SMD, UFP, SC-79, 2 PIN ; Number of Diodes: 1 ; PD: 715 milliwatts ; RoHS Compliant: RoHS.