|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP04113XP4113 datasheet
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
1 : Emitter 4 : Emitter 2 : Base 5 : Base 3 : Collector 6 : Collector (Tr1) EIAJ SC88 SMini6-G1 Package
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP04114 Marking = BK ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04115 Marking = 6T ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04116 Marking = 6U ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP04117 Marking = BL ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0411M Marking = ea ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP04210 Marking = 8Z ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04211 Marking = 9V ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04212 Marking = 8R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP04213 Marking = 8S ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04214 Marking = BR ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04215 Marking = 8T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04216 Marking = 8U ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
ASI10654 : NPN Silicon RF Power Transistor. IC VCBO VCEO VEBO PDISS TJ TSTG C 3.5 OC/W VCE 28 V POUT = 225 MHz Vision Carrier -8 dB ref. Sound Carrier -7 dB ref. Sideband Signal -16 dB ref. VCE 28 V POUT 1.0 A Load VSWR = 00:1, All Phase Angles = 225 MHz .
D20LC20U : Super Fast Recoveryrectifiers / Center Tap, Common Cathode (Three Terminal Type).
FGR3000CV-90DA : . HIGH POWER INVERTER USE PRESS PACK TYPE AUXILIARY CATHODE CONNECTOR (RED) DEPTH ± 0.2 CATHODE TYPE NAME q ITQRM Repetitive controllable on-state current.3000A q IT(AV) Average on-state current.900A q VDRM Repetitive peak off state voltage.4500V q Reverse conducting type APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
J108 : N-channel Switch. This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 58. Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VDG VGS IGF TJ, Tstg Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value Units mA °C * These.
MA27P01 : Marking = N ;; VR(V) = 60 ;; IF(mA) = 100 ;; Package = SSSMini2-F2. Low terminal capacitance: Ct 0.8 pF Low forward dynamic resistance: 1.0 Ultraminiature package and surface mounting type 0.6 mm (height: 0.52 mm) Parameter Reverse voltage (DC) Forward current (DC) Power dissipation * Junction temperature Storage temperature Note) With a glass epoxy board Parameter Reverse current (DC) Forward voltage (DC) Terminal.
MUR160 : Pakage = DO-15 ;; Max. Reverse Voltage VRM (V)= 600 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 35.
uClamp0511P : μClamp™ 1-Line ESD protection The μClamp™ series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD. It is designed to replace multilayer varistors (MLVs) in portable applications..
05002-150CFMB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.50E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Surface.
CRCW0402102RDEEDP : RESISTOR, METAL GLAZE/THICK FILM, 0.063 W, 0.5 %, 25 ppm, 102 ohm, SURFACE MOUNT, 0402. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP, ROHS COMPLIANT ; Resistance Range: 102 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 25 Â±ppm/Â°C.
ER2A-T3-LF : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.
NSBA113EDXV6T1G : 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN.
S758X43000183L5 : CAPACITOR, CERAMIC, 1000 V, 0.00000075 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 7.50E-7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 1000 volts ; Mounting Style: Through Hole ; Operating Temperature: -30 to 85 C (-22.
TCSCN1C105KAAR : CAPACITOR, TANTALUM, SOLID, POLARIZED, 16 V, 1 uF, SURFACE MOUNT, 1206. s: Configuration / Form Factor: Chip Capacitor ; General : Polarized ; Capacitance Range: 1 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 16 volts ; Leakage Current: 0.5000 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 1206 ; Operating Temperature: -55 to 85 C (-67.
UHN0J102MPD1TA : CAP,AL2O3,1MF,6.3VDC,20% -TOL,20% +TOL. Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C Lower impedance than HM series. Compliant to the RoHS directive (2002/95/EC). s Category Temperature Rated Voltage Range Rated Capacitance Range Capacitance Tolerance Leakage Current Performance Characteristics (120Hz, 20°C) After 2 minutes' application of rated.
YA869C15R : 150 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 190000 mA ; Pin Count: 3 ; Number of Diodes: 2.
ZXTP2012ATOA : 3500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP. Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. 3.5 amps continuous current to 15 amps peak current Very low saturation voltages Excellent gain to 10 amps APPLICATIONS - DC converters MOSFET gate.