|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP04116XP4116 datasheet
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
1 : Emitter 4 : Emitter 2 : Base 5 : Base 3 : Collector 6 : Collector (Tr1) EIAJ SC88 SMini6-G1 Package
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE 0.3mA VCC = 1k VCC = 1k VCB = 200MHz min V MHz k typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP04117 Marking = BL ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0411M Marking = ea ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP04210 Marking = 8Z ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04211 Marking = 9V ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04212 Marking = 8R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP04213 Marking = 8S ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04214 Marking = BR ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04215 Marking = 8T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04216 Marking = 8U ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP04217 Marking = BS ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0421M Marking = FH ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP04286 Marking = ho ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP04311 Marking = 7X ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
2SA1726 : Silicon PNP Epitaxial Planar Transistor. Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=10V, f=1MHz .
AZ988 : Electromechanical Relays. Rating (A) = 30A ;; Contact Form = Spst/spdt ;; Regulatory Approvals = ;; Dielectric Strength = 500 VDC Dielectric ;; Insulation Class = ;; Mounting Method = PCB Mount/quick Connects ;;.
BAR64-06 : Diodes For Switching Applications up to 3GHz. Frequency range above 1 MHz to 3 GHz Low resistance and long carrier lifetime Very low capacitance at zero volts reverse Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature TS 65°C Symbol VR IF Ptot Tj Top Tstg Value °C Unit mA mW 1For calculation.
BCW35 : Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 45V ;; IC(cont) = 0.6A ;; HFE(min) = 100 ;; HFE(max) = 350 ;; @ Vce/ic = 5V / 10mA ;; FT = 150MHz ;; PD = 0.36W.
CV7461 : Screening Options Available = ;; Polarity = NPN ;; Package = TO18 (TO206AA) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 40 ;; HFE(max) = 100 ;; @ Vce/ic = 5V / 5mA ;; FT = 90MHz ;; PD = 0.4W.
MTP10N60E7 : Obsolete, no on Replacement Part Available, Package: TO-220, Pins=3. This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls. These devices are particularly wellsuited.
Q62702F1591 : Transistor R.f Sot343. NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators to 10 GHz Noise figure at 1.8 GHz outstanding Gms at 1.8 GHz Transition frequency = 25 GHz Gold metalization for high reliability SIEGET 25 - Line Siemens Grounded Emitter Transistor 25 GHz T - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!.
NGTB15N60EG : IGBT 600V 15A NPT This Insulated Gate Bipolar Transistor (IGBT) a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device.
BUS12-JQR : 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.
CMPT591EBK : 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: SOT23, SOT-23, 3 PIN.
F332K53Y5RL63J7 : CAPACITOR, CERAMIC, 500 V, Y5R, 0.0033 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0033 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 500 volts ; Mounting Style: Through Hole ; Operating Temperature: -30 to 125 C (-22.
JAN1N5810US : 6 A, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 6000 mA ; trr: 0.0300 ns.
M83401-07-H-1000-G-G : RES NET,THIN FILM,100 OHMS,2% +/-TOL,-50,50PPM TC,6007 CASE. s: Configuration: Chip Array ; Category / Application: General Use.
MCS04020D1522BE000 : RESISTOR, THIN FILM, 0.063 W, 0.1 %, 25 ppm, 15200 ohm, SURFACE MOUNT, 0402. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP, ROHS COMPLIANT ; Resistance Range: 15200 ohms ; Tolerance: 0.1000 +/- % ; Temperature Coefficient: 25 Â±ppm/Â°C ; Power.
MPVA : CAPACITOR, CERAMIC, MULTILAYER, 500 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole.
NOJA336M002AWJ : CAPACITOR, NIOBIUM, 2.5 V, 33 uF, SURFACE MOUNT, 1206. s: Configuration / Form Factor: Chip Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Niobium / Niobium Oxide ; RoHS Compliant: Yes ; Capacitance Range: 33 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2.5 volts ; Mounting Style: Surface Mount Technology ; Operating Temperature:.
RW3T1011D : RESISTOR, WIRE WOUND, 3 W, 0.5 %, 20 ppm, 1010 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 1010 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 20 Â±ppm/Â°C ; Power Rating: 3 watts (0.0040.
S9014C-TS01-AP : SMALL SIGNAL TRANSISTOR. TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: +150 OC Marking Code: S9014 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Case Material: Molded Plastic. UL Flammability.