|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP04216XP4216 datasheet
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
1 : Emitter 4 : Emitter 2 : Base 5 : Base 3 : Collector 6 : Collector (Tr1) EIAJ SC88 SMini6-G1 Package
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 0.3mA VCC = 1k VCC = 1k VCB = 200MHz min V MHz k typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP04217 Marking = BS ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP0421M Marking = FH ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW|
|XP04286 Marking = ho ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP04311 Marking = 7X ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04312 Marking = 7T ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP04313 Marking = BZ ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04314 Marking = ca ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04315 Marking = CB ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP04316 Marking = 7U ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0431N Marking = HC ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP04387 Marking = it ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP04401 Marking = 5K ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP04501 Marking = 5H ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP04506 Marking = en ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.3 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
2SC3133 : Power. NPN Epitaxial Planar Type.
BT134Series : Triacs. Glass passivated triacs in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SYMBOL PARAMETER BT134WBT134WBT134WRepetitive.
IRF640FI : N-channel Enhancement Mode Power MOS Transistors. TYPICAL RDS(on) = 0.145 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT Symbol GS ID M() P tot V ISO T stg Tj Parameter.
KTA1282 : = General Purpose Transistor ;; Package = TO-92.
RURP8120CC : 5 to 100 Amp. 8a, 1200v Ultrafast Dual Diode. The is an ultrafast dual diode with soft recovery characteristics (trr 100ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications.
BC847BL3 : 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: ROHS COMPLIANT, TSLP-3-1, 3 PIN.
BCF33R : 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN.
C0603C221K5RAC7013 : CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.00022 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.20E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style:.
IMC0402RK5N6C : 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.0056 microH ; Rated DC Current: 340 milliamps ; Operating Temperature: -40 to 100 C (-40 to 212 F).
LR1206LF-01-R0825-F : RESISTOR, CURRENT SENSE, 0.5 W, 1 %, 100 ppm, 0.0825 ohm, SURFACE MOUNT, 1206. s: Category / Application: Current Sensing, General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP, LEAD FREE ; Resistance Range: 0.0825 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 Â±ppm/Â°C ; Power Rating: 0.5000 watts (6.70E-4.
MCS04020C1372DE000 : RESISTOR, THIN FILM, 0.063 W, 0.5 %, 50 ppm, 13700 ohm, SURFACE MOUNT, 0402. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP, ROHS COMPLIANT ; Resistance Range: 13700 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 50 Â±ppm/Â°C ; Power.
RSSD16X94A10R0JB00 : RESISTOR, POTENTIOMETER, WIRE WOUND, 70 W, 10 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Technology / Construction: Wirewound ; Mounting / Packaging: Panel Mount (Bushing), ROHS COMPLIANT ; Resistance Range: 10 ohms ; Tolerance: 5 +/- % ; Operating Temperature: -55 to 450 C (-67 to 842 F).
SIA418DJ-T1-GE3 : POWER, FET. TrenchFET® Power MOSFET % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Converters and Synchronous Buck Converters - Lower Ringing Voltage from Soft Turn-On - High Efficiency from Fast Turn-Off - Lower Shoot-Through Possibility ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise.
WPP1W2P5J-F : CAPACITOR, FILM/FOIL, POLYPROPYLENE, 100 V, 2.5 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 2.5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Through.
2N7002Q-7-F : SMALL SIGNAL, FET. Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. "Green" Device (Notes & 4) Qualified to AEC-Q101 standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (RDS(ON)).
8100LDM0505MKN2110 : CAP,AL2O3,10UF,25VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.
820541311 : RESISTOR, VOLTAGE DEPENDENT, 170 V, 57 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Power Rating: 0.6000 watts (8.04E-4 HP) ; Operating DC Voltage: 170 volts ; Operating Temperature: -40 to 125 C (-40 to 257 F).