Details, datasheet, quote on part number: XP04501
PartXP04501
CategoryDiscrete => Transistors => Composite Transistors
TitleComposite Transistors
DescriptionMarking = 5H ;; V<SUB>CEO</SUB>(V) = 50 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini6-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload XP04501 datasheet
Cross ref.Similar parts: BC847BS, IMX1T110, HN1C01FU, XP4501
Quote
Find where to buy
 
  

 

Features, Applications

Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half

Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions = 10 A, = 2 mA, = 10 A, = 0 VCB = 0 VCE = 0 VCE = 100 mA, 10 mA VCB = -2 mA, = 200 MHz VCB = 1 MHz 3.5 160 Min Typ Max Unit A V MHz pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Note) The part number in the parenthesis shows conventional part number.



Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.


 

Related products with the same datasheet
XP4501
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
XP04501XP4501
XP04506 Marking = en ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.3 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP04506XP4506
XP04601 Marking = 5C ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP04601XP4601
XP04654 Marking = ed ;; VCEO(V) = 40 ;; VCEO(Tr2)(V) = -15 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.05 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP04654XP4654
XP04683 Marking = er ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.015 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP04683XP4683
XP04878 Marking = 7Y ;; VCEO(V) = VDSS50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP05501 Marking = 5L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP05501XP5501
XP05531 Marking = 5M ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.05 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP05534 Composite Device - Composite Transistors
XP05553 Marking = 4U ;; VCEO(V) = 100 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.02 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP05554 Marking = he ;; VCEO(V) = 40 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP05555 Silicon NPN Epitaxial Planer Transistor
XP05555XP5555
XP05601 Marking = 4N ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP05601XP5601
XP06111 Marking = 6Z ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
Same catergory

05204GOB : Silicon Controlled Rectifier.

2SC3872 : NPN. Silicon NPN Triple Diffusion Planar Type ( For High Breakdown Voltage High-speed Switching ).

BSP603S2L : E.g. OptiMOS®. Feature Maximum Ratings, = 25 C, unless otherwise specified Parameter Continuous drain current Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, chip to ambient air: Electrical Characteristics = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source.

BU207 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 600V ;; IC(cont) = 5A ;; HFE(min) = 2 ;; HFE(max) = - ;; @ Vce/ic = 5V / 4.5A ;; FT = 7MHz ;; PD = 12W.

FTR-P5 : . Low operating sound An original silent mechanism decreases the propagation of operating sound when mounted on a PCB. (Average sound pressure: at 5 cm). Compact, high density package 198 mm2 mounting area. (46% less than the FTR-P1 Series quiet twin relay). High sensitivity, low power consumption (nominal power consumption: 450 mW). High capacity Heat.

HZK11AL : Diodes for Constant Voltage. Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply Low leakage, low zener impedance and maximum power dissipation of 400 mW. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. LLD package is suitable for high density surface mounting and high speed assembly. Type No. HZK-L Series Mark Color Code Package.

JC107 : NPN Sisicon Transistor.

UPF18030-095 : LDMOS.

APTM10HM05F : Full Bridge. Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Power MOS V FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors.

ALC10A101AB350 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 100 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 350 volts ; Leakage Current: 210 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).

BLC4204 : 3.5 W, INVERTER TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Inverter Transformer ; Mounting: Chip Transformer ; Operating Frequency: 40000 to 100000 Hz ; Output Voltage: 1500 volts ; Operating Temperature: -20 to 85 C (-4 to 185 F).

EKMG100EBC101MHB5D : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 30 microamps ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67.

HCG7A0J104IPPS : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 100000 uF, CHASSIS MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 5000 microamps ; ESR: 22 milliohms ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -25 to 85 C (-13 to 185 F).

KTC3400GA : 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: NPN ; Package Type: TO-92, TO-92, 3 PIN.

MT200T : 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 200000 mA ; Package: HERMETIC SEALED PACKAGE-4 ; Pin Count: 4 ; Number of Diodes: 4.

MTMF8234 : 18 A, 33 V, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 33 volts ; Package Type: SO8-F1-B, 8 PIN ; Number of units in IC: 1.

TRTEPC19-U016B : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.

1SV232TPHR4 : VHF BAND, 30.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE. s: Diode Type: VARIABLE CAPACITANCE DIODE.

 
0-C     D-L     M-R     S-Z