|Category||Discrete => Transistors => Composite Transistors|
|Description||Marking = en ;; V<SUB>CEO</SUB>(V) = 20 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.3 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini6-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP04506 datasheet
|Cross ref.||Similar parts: XP4506|
High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron.
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
1 : Emitter 4 : Emitter 2 : Base 5 : Base 3 : Collector 6 : Collector (Tr1) EIAJ SC88 SMini6-G1 Package
Parameter Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance ON ResistanceNote) The Part number in the Parenthesis shows conventional part number.
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|Related products with the same datasheet|
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|XP04601 Marking = 5C ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP04654 Marking = ed ;; VCEO(V) = 40 ;; VCEO(Tr2)(V) = -15 ;; IC(A) = 0.1 ;; IC(Tr2)(A) = -0.05 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP04683 Marking = er ;; VCEO(V) = 20 ;; VCEO(Tr2)(V) = -50 ;; IC(A) = 0.015 ;; IC(Tr2)(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP04878 Marking = 7Y ;; VCEO(V) = VDSS50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP05501 Marking = 5L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP05531 Marking = 5M ;; VCEO(V) = 10 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.05 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP05534 Composite Device - Composite Transistors|
|XP05553 Marking = 4U ;; VCEO(V) = 100 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.02 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP05554 Marking = he ;; VCEO(V) = 40 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP05555 Silicon NPN Epitaxial Planer Transistor|
|XP05601 Marking = 4N ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP06111 Marking = 6Z ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06112 Marking = 6V ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
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