Details, datasheet, quote on part number: XP05534
PartXP05534
Category
DescriptionComposite Device - Composite Transistors
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload XP05534 datasheet
  

 

Features, Applications

High transition frequency fT Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PT Tj Tstg Rating to +150 Unit mW C

Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Transition frequency Reverse transfer capacitance (Common emitter) Power gain Noise figure Symbol VCBO VEBO VBE hFE fT Cre GP NF Conditions = 10 A, = 10 A, = 0 VCB -1 mA VCB -1 mA VCB = -1 mA, = 100 MHz VCB = -1 mA, = 10.7 MHz VCB = -1 mA, = 100 MHz VCB = -1 mA, = 100 MHz Min 3 720 Typ Max Unit V mV MHz pF dB

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.



Collector output capacitance C (pF) (Common base, input open circuited) ob
Reverse transfer capacitance Cre (pF) (Common emitter)




 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
XP05553 Marking = 4U ;; VCEO(V) = 100 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.02 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP05554 Marking = he ;; VCEO(V) = 40 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP05555 Silicon NPN Epitaxial Planer Transistor
XP05555XP5555
XP05601 Marking = 4N ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW
XP05601XP5601
XP06111 Marking = 6Z ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP06111XP6111
XP06112 Marking = 6V ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW
XP06112XP6112
XP06113 Marking = 6W ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP06113XP6113
XP06114 Marking = CK ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
XP06114XP6114
XP06115 Marking = 6X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package
XP06115XP6115
XP06116 Marking = 6Y ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW
XP06116XP6116
XP0611FH Silicon PNP Epitaxial Planer Transistor
XP06210 Marking = CR ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW
XP06210XP6210
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