|Category||Discrete => Transistors => Composite Transistors|
|Description||Marking = he ;; V<SUB>CEO</SUB>(V) = 40 ;; V<SUB>CEO</SUB>(Tr2)(V) = ;; I<SUB>C</SUB>(A) = 0.1 ;; I<SUB>C</SUB>(Tr2)(A) = ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(Tr2)(kW ) = ;; Package = SMini6-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP05554 datasheet
|Cross ref.||Similar parts: MMDT3904P|
For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package.
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP PT Tj Tstg
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 0 VEB = 0 VCE = 1mA VCB = 200MHz VCB = 1MHz min typ max V MHz pF ns Unit µA
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP05555 Silicon NPN Epitaxial Planer Transistor|
|XP05601 Marking = 4N ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = 50 ;; IC(A) = -0.1 ;; IC(Tr2)(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW|
|XP06111 Marking = 6Z ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06112 Marking = 6V ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP06113 Marking = 6W ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP06114 Marking = CK ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06115 Marking = 6X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06116 Marking = 6Y ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0611FH Silicon PNP Epitaxial Planer Transistor|
|XP06210 Marking = CR ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP06211 Marking = 7Z ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
2N2857UB : Package = Cersot ;; Level = Jans ;; Vceo (V) = 15 ;; Vcbo (V) = 30 ;; Vebo (V) = 3.0 ;; Ic (A) = 0.04 ;; Power (W) ta = 0.2 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 150 ;; VCE(sat) (V) = 0.40.
2SC4152 : VCEO(V) = 700 ;; IC(A) = 0.3 ;; HFE(min) = 10 ;; HFE(max) = 40 ;; Package = TO-220F-A1.
2SK1853 : Switching N-channel Power MOSFET Industrial Use.
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SI7866DP-E3 : 18 A, 20 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0025 ohms ; Package Type: SO-8, POWERPAK, SO-8 ; Number of units in IC: 1.
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