|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP06114XP6114 datasheet
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL R1 R1/R2 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP06115 Marking = 6X ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06116 Marking = 6Y ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0611FH Silicon PNP Epitaxial Planer Transistor|
|XP06210 Marking = CR ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP06211 Marking = 7Z ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06212 Marking = 8V ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP06213 Marking = 8W ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP06214 Marking = aa ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06215 Marking = 8X ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06216 Marking = 8Y ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP06401 Marking = 5O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
181RKI : Phase Control Thyristors. Hermetic glass-metal seal dv/dt = 1000V/µs option International standard case TO-209AB (TO-93) Threaded studs UNF - 16UNF2A Typical Applications DC motor controls Controlled DC power supplies AC controllers V DRM/V RRM , max. repetitive peak and off-state voltage V I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current.
2SA1723 : PNP Epitaxial Planar Silicon Transistor, High-frequency Amp, Medium-power Amp Application.
2SC4004 : VCEO(V) = 800 ;; IC(A) = 1 ;; HFE(min) = 6 ;; HFE(max) = ;; Package = TO-220F-A1.
FQA7N60 : 600V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.
NEZ4450-4DD : 4w/8w C-band Power GAAS Fet N-channel GAAS Mes Fet. The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat.
C12010C : IND,WIREWOUND,12UH,7963 CASE. s: Application: General Purpose.
D1010UKG4 : 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 70 volts ; Package Type: ROHS COMPLIANT, CERAMIC, DR, 5 PIN ; Number of units in IC: 2.
PSMN2R6-30YLC : 100 A, 30 V, 0.00365 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0036 ohms ; Package Type: Flatpack, PLASTIC, POWER-SO8, LFPAK-4 ; Number of units in IC: 1.
PTA1543-2010CIB103 : RES,VARIABLE,CARBON,10K OHMS,100WV,20% +/-TOL. s: Potentiometer Type: Standard Potentiometer.
QTMCA-11F : RESISTOR, TEMPERATURE DEPENDENT, NTC, 5000 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Resistance Range: 5000 ohms ; Tolerance: 1 +/- %.
RL-5534 : SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 100000 Hz ; Input Voltage: 18 to 36 volts ; Output Voltage: 12 volts ; Standards: RoHS.
TCV51000UH : 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: Gull ; Application: General Purpose ; Inductance Range: 1000 microH ; Rated DC Current: 80 milliamps ; Operating Temperature: -20 to 80 C (-4 to 176 F).
20ACD1020KV1000PF+/-20%X7R : CAPACITOR, CERAMIC, 20000 V, X7R, 0.001 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 20000 volts ; Mounting Style: Through Hole ; Operating Temperature: 125 C (257.
852B1100BO1 : RES,TAPPED,WIREWOUND,100 OHMS,14.2WVDC,3% +/-TOL,180PPM TC. s: Potentiometer Type: Standard Potentiometer.