|Category||Discrete => Transistors => Bipolar => General Purpose|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download XP06115XP6115 datasheet
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
Symbol VCBO VCEO ICBO ICEO IEBO hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCE 0.3mA VCC = 1k VCC = 1k VCB 200MHz V MHz k min typ max Unit µA mANote) The Part number in the Parenthesis shows conventional part number.
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|XP06116 Marking = 6Y ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP0611FH Silicon PNP Epitaxial Planer Transistor|
|XP06210 Marking = CR ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP06211 Marking = 7Z ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06212 Marking = 8V ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW|
|XP06213 Marking = 8W ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW|
|XP06214 Marking = aa ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06215 Marking = 8X ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(Tr2)(kW|
|XP06216 Marking = 8Y ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW|
|XP06401 Marking = 5O ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
|XP06435 Marking = 7W ;; VCEO(V) = -20 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.03 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package|
2SD1263 : VCEO(V) = 250 ;; IC(A) = 0.75 ;; HFE(min) = 70 ;; HFE(max) = 250 ;; Package = TO-220F-A1.
CV7341A : Screening Options Available = ;; Polarity = PNP ;; Package = TO5 (TO205AA) ;; Vceo = 32V ;; IC(cont) = 0.05A ;; HFE(min) = 20 ;; HFE(max) = 44 ;; @ Vce/ic = 6V / 1mA ;; FT = 3MHz ;; PD = 0.25W.
FZ800R33KF2 : . Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive.
MMBF5457 : N-channel General Purpose Amplifier. This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These.
PTF080601 : Ldmos RF Power Field Effect Transistor 60 w, 860-960 MHZ. The a 60W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power Broadband internal matching Typical EDGE performance - Average output power W - Gain dB - Efficiency.
BUX77HR : Hi-Rel Bipolar Transistors Hi-Rel PNP bipolar transistor 150 V - 0.5 Ae.
ACR05B470JWS : CAPACITOR, CERAMIC, 50 V, C0G, 0.000047 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Dielectric: Ceramic Composition ; Capacitance Range: 4.70E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style: Through Hole ; Operating Temperature: -67 to 257 F (218 to 398 K).
APT97N65B2C6 : 97 A, 650 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 650 volts ; rDS(on): 0.0410 ohms ; Package Type: TO-247, TO-247, 3 PIN ; Number of units in IC: 1.
CMXT3946BK : 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: Complementary ; Package Type: SUPERMINI-6.
F840BU224M300A : CAPACITOR, METALLIZED FILM, POLYESTER, 760 V, 0.22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; Capacitance Range: 0.2200 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 760 volts ; Mounting Style: Through Hole ; Operating.
G300HHCK12P2H : 450 A, 1200 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: PLASTIC, INT-A-PAK-2, MODULE-3 ; Number of units in IC: 2.
174-103LAG-201 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 10000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD) ; Resistance Range: 10000 ohms ; Operating Temperature: -60 to 150 C (-76 to 302 F).
1N645LEADFREE : 0.4 A, 225 V, SILICON, SIGNAL DIODE, DO-7. s: Diode Type: General Purpose ; IF: 400 mA ; trr: 0.2000 ns ; RoHS Compliant: RoHS.
2SA1163-BL : 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236. s: Polarity: PNP ; Package Type: 2-3F1A, SC-59, TO-236MOD, 3 PIN.